Work

Doping of gallium nitride using disilane

Year: 1995

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/bf02676809

Authors: A. E. Wickenden, L. B. Rowland, K. Doverspike, D. K. Gaskill, J. A. Freitas, D. S. Simons, P. H. Chi

Institutions: United States Naval Research Laboratory, National Institute of Standards and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: U.S. Naval Research Laboratory

OpenAlex ID: W2070684149

FWCI: 4.867

Cites: 22

Cited by: 49

Related to: 10