Get started
Author

Chih-Chang Hsieh

Observed name: Chih Chang Hsieh
OpenAlex ID: A5111538188
Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage
2012 · Hang-Ting Lue, Pei-Ying Du, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 60
Study of fast initial charge loss and it's impact on the programmed states Vt distribution of charge-trapping NAND Flash
2010 · Chih-Ping Chen, Hang-Ting Lue, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 52
A highly scalable 8-layer Vertical Gate 3D NAND with split-page bit line layout and efficient binary-sum MiLC (Minimal Incremental Layer Cost) staircase contacts
2012 · Shih-Hung Chen, Hang-Ting Lue, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 41
A 512Gb In-Memory-Computing 3D-NAND Flash Supporting Similar-Vector-Matching Operations on Edge-AI Devices
2022 · Han-Wen Hu, Wei-Chen Wang, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 36
ICE: An Intelligent Cognition Engine with 3D NAND-based In-Memory Computing for Vector Similarity Search Acceleration
2022 · Han-Wen Hu, Wei-Chen Wang, et al. · IEEE/ACM International Symposium on Microarchitecture (MICRO) · 30
A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity
2015 · Hang-Ting Lue, Tzu-Hsuan Hsu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
Analog Computing in Memory (CIM) Technique for General Matrix Multiplication (GEMM) to Support Deep Neural Network (DNN) and Cosine Similarity Search Computing using 3D AND-type NOR Flash Devices
2022 · Ming-Liang Wei, Hang-Ting Lue, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
A Monte Carlo simulation method to predict large-density NAND product memory window from small-array test element group (TEG) verified on a 3D NAND Flash test chip
2016 · Chih-Chang Hsieh, Hang-Ting Lue, et al. · Symposium on VLSI Technology · 23
A highly pitch scalable 3D vertical gate (VG) NAND flash decoded by a novel self-aligned independently controlled double gate (IDG) string select transistor (SSL)
2012 · Chih-Ping Chen, Hang-Ting Lue, et al. · Symposium on VLSI Technology · 23
In-Memory-Searching Architecture Based on 3D-NAND Technology with Ultra-high Parallelism
2020 · Po-Hao Tseng, Feng-Ming Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application
2009 · Tzu-Hsuan Hsu, Hang-Ting Lue, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Controlled Thyristor (GCT) RAM with >40 μ A Current Sensing Window, >1010 Endurance, and 3-second Retention at Room Temperature
2022 · Wei-Chen Chen, Hang-Ting Lue, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability
2017 · Hang-Ting Lue, Pei-Ying Du, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
A physics-based Quasi-2D model to understand the wordline (WL) interference effects of junction-free structure of 3D NAND and experimental study in a 3D NAND flash test chip
2017 · Wei-Chen Chen, Hang-Ting Lue, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Chip Demonstration of a High-Density (43Gb) and High-Search-Bandwidth (300Gb/s) 3D NAND Based In-Memory Search Accelerator for Ternary Content Addressable Memory (TCAM) and Proximity Search of Hamming Distance
2023 · Chih-Chang Hsieh, Hang-Ting Lue, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 14
Z-Interference and Z-Disturbance in Vertical Gate-Type 3-D NAND
2016 · Teng-Hao Elton Yeh, Wei-Chen Chen, et al. · IEEE Transactions on Electron Devices · 14
On relaxing page program disturbance over 3D MLC flash memory
2015 · Yu-Ming Chang, Yung-Chun Li, et al. · International Conference on Computer Aided Design · 14
Study of the programming sequence induced back-pattern effect in split-page 3D vertical-gate (VG) NAND flash
2014 · Wei-Chen Chen, Hang-Ting Lue, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 14
Device Characteristics of Single-Gate Vertical Channel (SGVC) 3D NAND Flash Architecture
2016 · Chen-Jun Wu, Hang-Ting Lue, et al. · IEEE International Memory Workshop (IMW) · 13
Memory Architecture of 3D Vertical Gate (3DVG) NAND Flash Using Plural Island-Gate SSL Decoding Method and Study of it's Program Inhibit Characteristics
2012 · Kuo-Pin Chang, Hang-Ting Lue, et al. · IEEE International Memory Workshop (IMW) · 13
A novel double-trapping BE-SONOS charge-trapping NAND flash device to overcome the erase saturation without using curvature-induced field enhancement effect or high-K (HK)/metal gate (MG) materials
2014 · Hang-Ting Lue, Roger Lo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Study of the interference and disturb mechanisms of split-page 3D vertical gate (VG) NAND flash and optimized programming algorithms for multi-level cell (MLC) storage
2013 · Chih-Chang Hsieh, Hang-Ting Lue, et al. · Symposium on VLSI Technology · 11
Read Disturb Evaluations of 3D NAND Flash for Highly Read-Intensive Edge-Computing Inference Device for Artificial Intelligence Applications
2019 · Pei-Ying Du, Hang-Ting Lue, et al. · IEEE International Memory Workshop (IMW) · 10
Design innovations to optimize the 3D stackable vertical gate (VG) NAND flash
2012 · Chun-Hsiung Hung, Hang-Ting Lue, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing
2022 · Yu-Hsuan Lin, Po-Hao Tseng, et al. · IEEE International Memory Workshop (IMW) · 9
Works count: 36
Citation count: 581
H-index: 14
I10-index: 24
Year
Topic
Type