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M. J. Jou

Observed names: M J Jou, M.-J. Jou, M.J Jou, M.J. Jou, Ming-Juinn Jou
Institution: Epistar (Taiwan)
OpenAlex ID: A5111617583
Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
2006 · Y.J. Lee, J.M. Hwang, et al. · IEEE Photonics Technology Letters · 240
High-transparency Ni/Au ohmic contact to p -type GaN
1999 · J. K. Sheu, Y. K. Su, et al. · Applied Physics Letters · 221
Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
1998 · J. K. Sheu, Y. K. Su, et al. · Applied Physics Letters · 152
Organometallic vapor-phase epitaxial growth and characterization of the metastable alloy InP1−xSbx
1988 · M. J. Jou, Y. T. Cherng, et al. · Journal of Applied Physics · 89
The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxy
1987 · H.R. Jen, M.J. Jou, et al. · Journal of Crystal Growth · 83
Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening
2005 · Y.J. Lee, H.C. Kuo, et al. · IEEE Photonics Technology Letters · 76
Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
1999 · J. K. Sheu, Y. K. Su, et al. · Journal of Applied Physics · 70
Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx
1988 · M. J. Jou, Y. T. Cherng, et al. · Applied Physics Letters · 66
Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates
2005 · Y.J. Lee, T.C. Hsu, et al. · Materials Science and Engineering B · 61
Equivalent circuit model of quantum-well lasers
1995 · M.F. Lu, J.S. Deng, et al. · IEEE Journal of Quantum Electronics · 50
OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx
1988 · M.J. Jou, Y.T. Cherng, et al. · Journal of Crystal Growth · 50
Highly reliable operation of indium tin oxide AlGaInPorange light-emitting diodes
1994 · J.-F. Lin, M.-C. Wu, et al. · Electronics Letters · 48
Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN superlattice
2001 · J.K. Sheu, G.C. Chi, et al. · IEEE Electron Device Letters · 45
Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces
2000 · J. K. Sheu, Y. K. Su, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 40
Optical absorption and emission of InP1−xSbx alloys
1990 · E. H. Reihlen, M. J. Jou, et al. · Journal of Applied Physics · 40
Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer
2001 · J.K. Sheu, G.C. Chi, et al. · IEEE Photonics Technology Letters · 39
Indium tin oxide ohmic contact to highly doped n-GaN
1999 · J.K. Sheu, Y.K. Su, et al. · Solid-State Electronics · 39
Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
2000 · J.K Sheu, G.C Chi, et al. · Solid-State Electronics · 38
Thermal stability study of Ni/Ta n-GaN Schottky contacts
2002 · G. L. Chen, F. C. Chang, et al. · Applied Physics Letters · 28
Organometallic vapor phase epitaxial growth studies of GaP1−xSbx and InP1−xSbx
1989 · M.J. Jou, G.B. Stringfellow · Journal of Crystal Growth · 24
Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy
2005 · Y.J. Lee, H.C. Tseng, et al. · IEEE Photonics Technology Letters · 16
Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency
2007 · Y.J. Lee, T.C. Lu, et al. · Materials Science and Engineering B · 15
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
2006 · Y.J. Lee, J.M. Hwang, et al. · IEEE Photonics Technology Letters · 14
Raman scattering in GaP1−xSbx
1988 · Y. T. Cherng, M. J. Jou, et al. · Journal of Applied Physics · 14
Organometallic vapor phase epitaxial growth of a new quarternary semiconductor alloy Ga1−xInxP1−ySby
1990 · M.J. Jou, D.H. Jaw, et al. · Journal of Crystal Growth · 13
Works count: 49
Citation count: 1,657
H-index: 20
I10-index: 27
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