Author

A. Yoshii

Observed names: A Yoshii, A. Yoshi'i

Institution: NTT (Japan)

Observed institution: NTT (Japan)

OpenAlex ID: A5111668661

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

1994 · A. Abramo, L. Baudry, et al. · IEEE Transactions on Electron Devices · 70

Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulation

1983 · A. Yoshii, M. Tomizawa, et al. · IEEE Transactions on Electron Devices · 69

Temperature dependence of hot carrier effects in short-channel Si-MOSFETs

1995 · N. Sano, M. Tomizawa, et al. · IEEE Transactions on Electron Devices · 61

A three-dimensional analysis of semiconductor devices

1982 · A. Yoshii, H. Kitazawa, et al. · IEEE Transactions on Electron Devices · 56

Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation

1985 · M. Tomizawa, A. Yoshii, et al. · IEEE Electron Device Letters · 45

Two-dimensional semiconductor analysis using finite-element method

1979 · T. Adachi, A. Yoshii, et al. · IEEE Transactions on Electron Devices · 45

Accurate modeling of AlGaAs/GaAs heterostructure bipolar transistors by two-dimensional computer simulation

1984 · K. Yokoyama, M. Tomizawa, et al. · IEEE Transactions on Electron Devices · 40

Hot-electron velocity characteristics at AlGaAs/GaAs heterostructures

1984 · M. Tomizawa, K. Yokoyama, et al. · IEEE Electron Device Letters · 33

Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

1989 · M. Tomizawa, T. Furuta, et al. · IEEE Transactions on Electron Devices · 30

Nonstationary carrier dynamics in quarter-micron Si MOSFETs

1988 · M. Tomizawa, K. Yokoyama, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 29

Threshold-sensitivity minimization of short-channel MOSFET's by computer simulation

1980 · K. Yokoyama, A. Yoshii, et al. · IEEE Transactions on Electron Devices · 29

Scattering-matrix method for the tight-binding model of heterostructure electronic states

1996 · H. Taniyama, A. Yoshii · Physical review. B, Condensed matter · 25

Threshold-voltage analysis of short- and narrow-channel MOSFET's by three-dimensional computer simulation

1982 · R. Kasai, K. Yokoyama, et al. · IEEE Transactions on Electron Devices · 24

Semiconductor device simulation at NTT

1985 · K. Yokoyama, M. Tomizawa, et al. · IEEE Transactions on Electron Devices · 20

Design considerations for thin-film SOI/CMOS device structures

1989 · T. Aoki, M. Tomizawa, et al. · IEEE Transactions on Electron Devices · 17

Precise ion-implantation analysis including channeling effects

1986 · T. Takeda, S. Tazawa, et al. · IEEE Transactions on Electron Devices · 14

Scaled performance for submicron GaAs MESFET's

1985 · K. Yokoyama, M. Tomizawa, et al. · IEEE Electron Device Letters · 13

A numerical analysis for very small semiconductor devices

1980 · A. Yoshii, S. Horiguchi, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 12

Analysis of latchup-induced photon emissions

1990 · T. Aoki, A. Yoshii · IEEE Transactions on Electron Devices · 11

Analysis of latchup-induced photoemission

1989 · T. Aoki, A. Yoshii · Technical digest - International Electron Devices Meeting/Technical digest · 10

Anomalous gate-to-drain capacitance characteristics of GaAs MESFET's

1983 · K. Yokoyama, M. Tomizawa, et al. · IEEE Transactions on Electron Devices · 9

Quantum distributed model of the resonant tunneling transistor

1994 · H. Taniyama, M. Tomizawa, et al. · IEEE Transactions on Electron Devices · 8

Time-of-flight measurement for electron velocity in p-AlGaAs/GaAs/AlGaAs at a high field

1989 · T. Furuta, N. Shigekawa, et al. · Applied Physics Letters · 8

A two-dimensional Boltzmann transport equation approach to ion implantation in silicon

1983 · T. Takeda, A. Yoshii · IEEE Electron Device Letters · 8

Two-dimensional, static and dynamic device simulation of laser diodes

2003 · S. Seki, M. Tomizawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7

Works count: 44

Citation count: 729

H-index: 15

I10-index: 20