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Junro Sakai

Observed names: J. Sakai, Junro SAKAI, Junro Sakai Junro Sakai, Junrou Sakai
OpenAlex ID: A5111701178
Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2
1992 · Toru Tatsumi, Ken-ichi Aketagawa, et al. · Journal of Crystal Growth · 49
Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium
2002 · Yee-Chia Yeo, Qiang Lu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39
Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
1996 · Takahiro Tamura, Youichi Inoue, et al. · Japanese Journal of Applied Physics · 30
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Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
1995 · Takeharu Okuno, Shinji Kawaji, et al. · Journal of the Physical Society of Japan · 28
Selective Epitaxial Growth of Si and Si1-xGex Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si2H6 and GeH4
1992 · Ken-ichi Aketagawa, Toru Tatsumi, et al. · Japanese Journal of Applied Physics · 22
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Limiting conditions of Si selective epitaxial growth in Si2H6 gas-source molecular beam epitaxy
1991 · K. Aketagawa, T. Tatsumi, et al. · Applied Physics Letters · 22
Limitations of selective epitaxial growth conditions in gas-source MBE using Si2H6
1991 · Ken-ichi Aketagawa, Toru Tatsumi, et al. · Journal of Crystal Growth · 21
Structural Analysis for Water Absorption of SiOF Films Prepared by High-Density-Plasma Chemical Vapor Deposition
1998 · Takahiro Tamura, Junro Sakai, et al. · Japanese Journal of Applied Physics · 14
Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
1997 · Takahiro Tamura, Junro Sakai, et al. · Japanese Journal of Applied Physics · 14
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Photoluminescence and Raman spectra of Si/Si1−xGex strained superlattices under high pressure
1995 · S. Hitomi, K. Takarabe, et al. · Journal of Physics and Chemistry of Solids · 10
High-throughput and fully automated system for molecular-beam epitaxy
1988 · Junro Sakai, Shun-ichi Murakami, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 9
The influence of Cl2 on Si1 - xGex selective epitaxial growth and B-doping properties by UHV-CVD
1993 · Ken-ichi Aketagawa, Toru Tatsumi, et al. · Journal of Crystal Growth · 8
Molecular Beam Flux Monitor Using Cold Cathode Discharge Induced Emission Spectroscopy
1988 · Junro Sakai, Guorong Chen, et al. · Japanese Journal of Applied Physics · 8
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SiGe/Si Heterostructures
1992 · Toru Tatsumi, Ken-ichi Aketagawa, et al. · International Conference on Solid State Devices and Materials (SSDM) · 4
In situ determination of Ba, Y, Cu and O2 flux by cold cathode discharge induced emission spectroscopy
1989 · Junro Sakai, Kazunori Kato, et al. · Journal of Crystal Growth · 4
Si/Si1-xGex Selective Epitaxial Growth by Ultra High Vacuum Chemical Vapor Deposition Using Si2H6, GeH4
1991 · Ken-ichi Aketagawa, Toru Tatsumi, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
Influence of Gas Desorption from SiOF Film Prepared by High-Density-Plasma Chemical Vapor Deposition upon TiN/Ti Film
1999 · Takahiro Tamura, Junro Sakai, et al. · Japanese Journal of Applied Physics · 1
Lattice Strain in Si1-xGex Alloy and Si/Si1-xGex Superlattice
1993 · Kazuhiro Iwasa, Kenichi Takarabe, et al. · Japanese Journal of Applied Physics · 1
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Limitation of Selective Epitaxial Growth Conditions in Gas Source MBE Using Si2H6
1990 · Junro Sakai, Ken-Ichi Aketagawa, et al. · MRS Proceedings · 1
Preface—Japan Vacuum Show “VACUUM 2015”—
2015 · Junro SAKAI · Journal of the Vacuum Society of Japan
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Mourning for Dr. Zenjiro ODA
2014 · Junro SAKAI · Journal of the Vacuum Society of Japan
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Preface^|^mdash;Japan Vacuum Show ^|^ldquo;VACUUM2014^|^rdquo;^|^mdash;
2014 · Junro SAKAI · Journal of the Vacuum Society of Japan
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A Model for Heterogeneous Nucleation and Growth of Silicon Nanoparticles on Silicon Dioxide from Disilane
2001 · William T. Leach, Jian-Hong Zhu, et al. · MRS Proceedings
Monitoring of Silicon Nano-Crystal Dots Formation on SiO2 and on Si3N4 in an UHV-CVD System
2001 · Takayuki Kawashima, Supika Mashiro, et al. · MRS Proceedings
SiGe selective epitaxial growth using ultra high-vacuum chemical vapor deposition
2000 · Junro Sakai · OYOBUTURI
Works count: 31
Citation count: 288
H-index: 10
I10-index: 10
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