Limiting conditions of Si selective epitaxial growth in Si2H6 gas-source molecular beam epitaxy
Year: 1991
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.106234
Authors: K. Aketagawa, T. Tatsumi, J. Sakai
Institutions: Anelva Corporation (Japan), NEC (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1970952249