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T. Tatsumi

Observed names: T Tatsumi, T. TATSUMI, Toru Tatsumi Toru Tatsumi
Institution: NEC (Japan)
OpenAlex ID: A5110159963
A 0.1-μm delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy
1998 · K. Noda, T. Tatsumi, et al. · IEEE Transactions on Electron Devices · 65
NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors
2001 · T. Miwa, J. Yamada, et al. · IEEE Journal of Solid-State Circuits · 63
Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-sificidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices
2005 · K. Takahashi, K. Manabe, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 58
Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures
1989 · J. Fujita, T. Tatsumi, et al. · Applied Physics Letters · 52
A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology
1994 · F. Sato, T. Tatsumi, et al. · IEEE Transactions on Electron Devices · 37
Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistors
1995 · F. Sato, T. Hashimoto, et al. · IEEE Transactions on Electron Devices · 36
Low-resistance self-aligned Ti-silicide technology for sub-quarter micron CMOS devices
1996 · T. Mogami, H. Wakabayashi, et al. · IEEE Transactions on Electron Devices · 32
Ordered structure at Si/Ge interfaces
1994 · N. Ikarashi, K. Akimoto, et al. · Physical Review Letters · 31
A selective epitaxial SiGe/Si planar photodetector for Si-based OEIC's
1997 · T. Tashiro, T. Tatsumi, et al. · IEEE Transactions on Electron Devices · 29
Synchrotron X-ray diffraction study of an interfacial super-structure: a-Si on Ge0.2Si0.8 (111)-5×5
1987 · K. Akimoto, J. Mizuki, et al. · Surface Science · 27
Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM
2002 · K. Amanuma, T. Tatsumi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25
A 60-GHz f/sub T/ super self-aligned selectively grown SiGe-base (SSSB) bipolar transistor with trench isolation fabricated on SOI substrate and its application to 20-Gb/s optical transmitter ICs
1999 · F. Sato, T. Hashimoto, et al. · IEEE Transactions on Electron Devices · 24
Si-analog IC's for 20 Gb/s optical receiver
1994 · M. Soda, H. Tezuka, et al. · IEEE Journal of Solid-State Circuits · 24
Limiting conditions of Si selective epitaxial growth in Si2H6 gas-source molecular beam epitaxy
1991 · K. Aketagawa, T. Tatsumi, et al. · Applied Physics Letters · 22
Controlling Fluorine Concentration of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics
1997 · Kazuhiko Endo Kazuhiko Endo, Toru Tatsumi Toru Tatsumi · Japanese Journal of Applied Physics · 21
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Hemispherical grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitor
1995 · H. Watanabe, T. Tatsumi, et al. · IEEE Transactions on Electron Devices · 20
Photoluminescence of Si1-xGex/Si Quantum Well Structures
1991 · Koichi Terashima, Michio Tajima, et al. · Japanese Journal of Applied Physics · 20
Direct observation of Ge and Si ordering at the Si/B/ Gex Si1−x (111) interface by anomalous x-ray diffraction
1992 · D. J. Tweet, K. Akimoto, et al. · Physical Review Letters · 19
0.1 μm delta-doped MOSFET using post low-energy implanting selective epitaxy
2002 · K. Noda, T. Uchida, et al. · Symposium on VLSI Technology · 17
Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals
2000 · K. Watanabe, T. Tatsumi · Applied Physics Letters · 17
An advanced technique for fabricating hemispherical-grained (HSG) silicon storage electrodes
1995 · H. Watanabe, T. Tatsumi, et al. · IEEE Transactions on Electron Devices · 17
A 128 kb FeRAM macro for a contact/contactless smart card microcontroller
2002 · J. Yamada, T. Miwa, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 15
A 2.4 Gb/s receiver and a 1:16 demultiplexer in one chip using a super self-aligned selectively grown SiGe base (SSSB) bipolar transistor
1996 · F. Sato, H. Tezuka, et al. · IEEE Journal of Solid-State Circuits · 15
A manufacturable copper/low-k SiOC/SiCN process technology for 90 nm-node high performance eDRAM
2003 · K. Higashi, N. Nakamura, et al. · IEEE International Interconnect Technology Conference (IITC) · 14
Factors determining the composition of strained GeSi layers grown with disilane and germane
1994 · D. J. Tweet, T. Tatsumi, et al. · Applied Physics Letters · 14
Works count: 107
Citation count: 1,150
H-index: 18
I10-index: 41
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