A 60-GHz f/sub T/ super self-aligned selectively grown SiGe-base (SSSB) bipolar transistor with trench isolation fabricated on SOI substrate and its application to 20-Gb/s optical transmitter ICs
Year: 1999
Type: article
DOI: 10.1109/16.772473
Authors: F. Sato, T. Hashimoto, H. Tezuka, M. Soda, T. Suzaki, T. Tatsumi, T. Tashiro
Institution: NEC (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2164808288