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Xubo Song

Observed name: Xu-Bo Song
ORCID: 0000-0002-5991-7169
Observed ORCID: 0000-0002-5991-7169
OpenAlex ID: A5111813105
Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene
2020 · Cui Yu, Zezhao He, et al. · IEEE Electron Device Letters · 20
Dynamic Characteristics of AlGaN/GaN Fin-MISHEMTs With Al2O3Dielectric
2018 · Xingye Zhou, Xin Tan, et al. · IEEE Transactions on Electron Devices · 19
High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate
2020 · Zezhao He, Cui Yu, et al. · Carbon · 18
Simulation study of GaN-based HFETs with graded AlGaN barrier
2015 · Xingye Zhou, Zhihong Feng, et al. · Solid-State Electronics · 17
High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition
2015 · Hong-Yu Guo, Yuan-Jie Lv, et al. · Chinese Physics Letters · 13
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High‐Frequency Flexible Graphene Field‐Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut‐Off Frequency
2018 · Cui Yu, Zezhao He, et al. · physica status solidi (RRL) - Rapid Research Letters · 10
Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al 2 O 3 Gate Dielectric
2016 · Xin Tan, Xing-Ye Zhou, et al. · Chinese Physics Letters · 10
Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h
2017 · Yuangang Wang, Yuanjie Lv, et al. · IEEE Electron Device Letters · 9
Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects
2014 · Xingye Zhou, Zhihong Feng, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 9
Angle-multiplexed guided mode resonance metasurfaces for broadband terahertz fingerprint detection
2025 · Hongshun Sun, Yunhao Cao, et al. · Photonics Research · 8
Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates
2016 · Ze-Zhao He, Ke-Wu Yang, et al. · Chinese Physics Letters · 7
Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors
2018 · Xuedong Gao, Cui Yu, et al. · Nanoscale Advances · 5
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Design of GaN SBD with high cutoff frequency for THz mixer applications
2025 · Siyuan Zhang, Xiaolin Hao, et al. · Micro and Nanostructures · 2
Threshold voltage modulation mechanism of high-performance normally-off AlGaN/GaN gates-separating groove HFET
2018 · Yuangang Wang, Yuanjie Lv, et al. · Superlattices and Microstructures · 2
Direct-readout pressure sensor based on AlGaN/GaN heterostructure
2018 · Xin Tan, Yuanjie Lv, et al. · Microsystem Technologies · 2
High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model
2015 · Yu-Long Fang, Zhi-Hong Feng, et al. · Chinese Physics Letters · 2
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Damage Mechanism of 1.335 GeV Ta Ion Irradiation on High-Frequency GaN Schottky Barrier Diodes
2026 · Yan Ren, Honghui Liu, et al. · IEEE Transactions on Nuclear Science · 1
Over 20 % improvement of current-gain cut off frequency 0.3 μm AlGaN/GaN HEMTs with ultra-low Von Schottky Drain for broadband application
2025 · Zhe Lin, Jihong Ding, et al. · Micro and Nanostructures · 1
Dynamic characteristics and related trapping effects of GaN-based Fin-MISHEMTs
2017 · Xingye Zhou, Xin Tan, et al. · IEEE International Conference on ASIC (ASICON) · 1
Design and realization of a X-band graphene amplifier MMIC
2017 · Xubo Song, Cui Yu, et al. · IEEE International Conference on ASIC (ASICON) · 1
Influence of AlGaN barrier layer on the RF electric characteristics for W-Band AlGaN/GaN HEMTs
2014 · Yuanjie Lv, Zhihong Feng, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 1
Mocvd再成長n~+ganオーム接触プロセスf_t/f_(max)>150/210ghzのalgan/gan Hfetsデバイスについて研究した。【jst・京大機械翻訳】
2016 · Lv Yuanjie, Zhihong Feng, et al. · JOURNAL OF INFRARED AND MILLIMETER WAVES
リセスゲートによる縮尺AlGaN/GaNH FETの改善された性能【Powered by NICT】
2016 · Lv Yuanjie, Xubo Song, et al. · IEEE Conference Proceedings
Works count: 23
Citation count: 158
H-index: 9
I10-index: 7
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