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Hideaki Matsuyama
Institution:
Fuji Electric (Japan)
Observed institution:
Fuji Electric (Japan)
OpenAlex ID:
A5112263956
Demonstration of 1200 V/1.4 mΩ cm 2 vertical GaN planar MOSFET fabricated by an all ion implantation process
2019
·
Ryo Tanaka
, Shinya Takashima
, et al.
·
Japanese Journal of Applied Physics
·
124
PDF
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
2017
·
Masahiro Horita
, Shinya Takashima
, et al.
·
Japanese Journal of Applied Physics
·
114
Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
2017
·
Shinya Takashima
, Katsunori Ueno
, et al.
·
Applied Physics Express
·
91
PDF
Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams
2017
·
Akira Uedono
, Shinya Takashima
, et al.
·
physica status solidi (b)
·
80
Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam
2015
·
Akira Uedono
, Shinya Takashima
, et al.
·
physica status solidi (b)
·
74
Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs
2019
·
Ryo Tanaka
, Shinya Takashima
, et al.
·
Applied Physics Express
·
59
PDF
Retraction: “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”
2016
·
Masahiro Horita
, Shinya Takashima
, et al.
·
Japanese Journal of Applied Physics
·
5
PDF
Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations
2016
·
Masahiro Horita
, Shinya Takashima
, et al.
·
Japanese Journal of Applied Physics
·
3
PDF
Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam
2016
·
Akira Uedono
, Shinya Takashima
, et al.
·
International Workshop on Junction Technology
·
1
Growth and Electrical Properties of Fe doped (Ba,Sr)TiO3 Thin Films Deposited by Pulsed Laser Deposition
2001
·
Yoshiyuki Yonezawa
, Megumi Kato
, et al.
·
MRS Proceedings
·
1
Temperature dependence of the effective mobility of GaN-MOSFETs
2020
·
Katsunori Ueno
, Hideaki Matsuyama
, et al.
·
The Japan Society of Applied Physics
Evaluation of electron trap behavior by voltage stress using GaN-MOS capacitor
2020
·
Hideaki Matsuyama
, Katsunori Ueno
, et al.
·
The Japan Society of Applied Physics
Electronic states of Ga in SiO 2 by first principles calculations
2020
·
Yuki Ohuchi
, Miki Ogasawara
, et al.
·
The Japan Society of Applied Physics
Evaluation of deep interface states for SiC-MOS capacitor by photo-assisted CV method
2020
·
Hideaki Matsuyama
, Yutaka Terao
, et al.
·
The Japan Society of Applied Physics
Demonstration of 1200 V vertical GaN planar MOSFET fabricated by all ion implantation process
2019
·
Ryo Tanaka
, Shinya Takashima
, et al.
·
The Japan Society of Applied Physics
Control of MOS channel characteristics of GaN-DIMOSFET by Mg implantation dose
2019
·
Ryo Tanaka
, Shinya Takashima
, et al.
·
The Japan Society of Applied Physics
CV characteristics of p-GaN/SiO2 MOS capacitors
2018
·
Hideaki Matsuyama
, Katsunori Ueno
, et al.
·
The Japan Society of Applied Physics
Evaluation of Ga-oxide layers on GaN layer surface and MOS interface by XPS
2018
·
Hideaki Matsuyama
, Katsunori Ueno
, et al.
·
The Japan Society of Applied Physics
Hysteresis behavior of GaN-MOSFETs
2018
·
Katsunori Ueno
, Hideaki Matsuyama
, et al.
·
The Japan Society of Applied Physics
Demonstration of vertical GaN MOSFET fabricated by Mg ion implantation
2018
·
Ryo Tanaka
, Shinya Tanashima
, et al.
·
The Japan Society of Applied Physics
Characteristics of Schottky Barrier for p-GaN Epitaxial Layers on GaN Substrate
2018
·
Hideaki Matsuyama
, Katsunori Ueno
, et al.
·
The Japan Society of Applied Physics
GaN-MOSFET characteristics of the controlled interface
2018
·
Katsunori Ueno
, Hideaki Matsuyama
, et al.
·
The Japan Society of Applied Physics
Improvement of MOS channel properties on Mg implanted GaN MOSFETs
2018
·
Shinya Takashima
, Ryo Tanaka
, et al.
·
The Japan Society of Applied Physics
Evaluation of SBD characteristics on lightly-doped p-type GaN layers
2017
·
Hideaki Matsuyama
, Katsunori Ueno
, et al.
·
The Japan Society of Applied Physics
Activation evaluation of Mg implanted GaN layer by capacitance measurement
2017
·
Shinya Takashima
, Katsunori Ueno
, et al.
·
The Japan Society of Applied Physics
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Works count:
33
Citation count:
552
H-index:
6
I10-index:
6
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