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Ludovic Goux

10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
2011 · B. Govoreanu, G.S. Kar, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 649
Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
2020 · A. Belmonte, H. Oh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 236
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
2010 · L. Goux, P. Czarnecki, et al. · Applied Physics Letters · 235
Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM
2012 · Yang Yin Chen, B. Govoreanu, et al. · IEEE Transactions on Electron Devices · 194
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
2010 · L. Goux, J. G. Lisoni, et al. · Journal of Applied Physics · 187
Intrinsic switching variability in HfO2 RRAM
2013 · A. Fantini, L. Goux, et al. · IEEE International Memory Workshop (IMW) · 164
Causes and consequences of the stochastic aspect of filamentary RRAM
2015 · R. Degraeve, A. Fantini, et al. · Microelectronic Engineering · 146
On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems
2010 · L. Goux, Y.-Y Chen, et al. · Electrochemical and Solid-State Letters · 129
Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories
2010 · F. Nardi, D. Ielmini, et al. · Solid-State Electronics · 114
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
2011 · L. Goux, K. Opsomer, et al. · Applied Physics Letters · 104
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Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM
2012 · R. Degraeve, A. Fantini, et al. · Symposium on VLSI Technology · 89
Intrinsic program instability in HfO2 RRAM and consequences on program algorithms
2015 · A. Fantini, G. Gorine, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 82
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
2013 · N. Raghavan, R. Degraeve, et al. · IEEE International Reliability Physics Symposium proceedings · 78
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
2012 · L. Goux, A. Fantini, et al. · Symposium on VLSI Technology · 70
Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures
2012 · A. Fantini, D. J. Wouters, et al. · IEEE International Memory Workshop (IMW) · 70
Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance
2017 · B. Govoreanu, G. L. Donadio, et al. · Symposium on VLSI Technology · 68
Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
2010 · R. Degraeve, Ph. Roussel, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 64
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability
2013 · N. Raghavan, R. Degraeve, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 63
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
2012 · Yang Yin Chen, G. Pourtois, et al. · Applied Physics Letters · 61
Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance
2019 · D. Garbin, W. Devulder, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 60
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
2013 · L. M. Prócel, L. Trojman, et al. · Journal of Applied Physics · 60
Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories
2015 · Sergiu Clima, Y. Y. Chen, et al. · IEEE Electron Device Letters · 58
Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems
2011 · L. Goux, X. P. Wang, et al. · Electrochemical and Solid-State Letters · 56
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Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
2007 · D. Tio Castro, L. Goux, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 56
Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
2016 · U. Celano, G. Giammaria, et al. · Nanoscale · 53
Works count: 168
Citation count: 5,410
H-index: 38
I10-index: 106
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