Author

M. P. Chauvat

Observed names: Chauvat M.-P., Chauvat, M-P., Chauvat, M.P., Chauvat, Marie, Pierre, Chauvat, Marie-Pierre, M P Chauvat, M-P Chauvat, M. P Chauvat, M.-P Chauvat, M.-P. Chauvat, M.P. CHAUVAT, M.P. Chauvat, M.‐P. CHAUVAT, Marie P. Chauvat, Marie Pierre Chauvat, Marie-Pierre Chauvat

Institutions: Centre National de la Recherche Scientifique, École Nationale Supérieure d'Ingénieurs de Caen, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Normandie Université, Centre de Recherche sur les Ions, les Matériaux et la Photonique, Central Institute of Medicinal and Aromatic Plants, Université de Caen Normandie

Observed institutions: Centre National de la Recherche Scientifique, École Nationale Supérieure d'Ingénieurs de Caen, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Normandie Université, Centre de Recherche sur les Ions, les Matériaux et la Photonique, Institut de l'Audition, Central Institute of Medicinal and Aromatic Plants, Université de Caen Normandie

ORCID: 0000-0003-1860-9917

Observed ORCID: 0000-0003-1860-9917

OpenAlex ID: A5055102336

Implantation damage formation in a-, c- and m-plane GaN

2016 · K. Lorenz, E. Wendler, et al. · Acta Materialia · 89

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

2014 · S. Valdueza-Felip, E. Bellet-Amalric, et al. · Journal of Applied Physics · 57

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Epitaxial Growth of Sputtered Ultra-Thin NbN Layers and Junctions on Sapphire

2009 · J.-C. Villegier, S. Bouat, et al. · IEEE Transactions on Applied Superconductivity · 51

High Curie temperature for La0.7Sr0.3MnO3thin films deposited on CeO2/YSZ-based buffered silicon substrates

2009 · P Perna, L Méchin, et al. · Journal of Physics Condensed Matter · 45

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InAlGaN/GaN HEMTs at Cryogenic Temperatures

2016 · Ezgi Dogmus, Riad Kabouche, et al. · Electronics · 44

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Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

2008 · L. Lahourcade, J. Renard, et al. · Journal of Applied Physics · 34

Defect structure in heteroepitaxial semipolar (11\bar {2} 2 ) (Ga, Al)N

2010 · Y Arroyo Rojas Dasilva, M P Chauvat, et al. · Journal of Physics Condensed Matter · 33

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy

2014 · L Desplanque, M Fahed, et al. · Nanotechnology · 32

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

2013 · H. Machhadani, M. Beeler, et al. · Journal of Applied Physics · 25

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

2009 · L. Lahourcade, J. Pernot, et al. · Applied Physics Letters · 25

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

2011 · B. Lacroix, M. P. Chauvat, et al. · Applied Physics Letters · 23

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

2016 · S. Valdueza-Felip, A. Ajay, et al. · Solar Energy Materials and Solar Cells · 20

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Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

2013 · Pierre Ruterana, Marie-Pierre Chauvat, et al. · Japanese Journal of Applied Physics · 18

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The high sensitivity of InN under rare earth ion implantation at medium range energy

2011 · B Lacroix, M P Chauvat, et al. · Journal of Physics D Applied Physics · 17

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

2014 · D. Skuridina, D.V. Dinh, et al. · Applied Surface Science · 16

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

2019 · P. Chauhan, S. Hasenöhrl, et al. · Journal of Applied Physics · 15

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Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

2011 · G. R. Mutta, P. Ruterana, et al. · physica status solidi (b) · 15

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

2020 · Pierre Ruterana, Magali Morales, et al. · Journal of Applied Physics · 14

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

2018 · M. Fialho, S. Magalhães, et al. · Surface and Coatings Technology · 13

Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

2022 · L. Khomenkova, H. Merabet, et al. · Surfaces and Interfaces · 12

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

2016 · M. Fialho, S. Magalhães, et al. · Journal of Applied Physics · 12

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

2019 · Prerna Chauhan, S. Hasenöhrl, et al. · Applied Surface Science · 11

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

2016 · H. Ben Ammar, A. Minj, et al. · physica status solidi (a) · 11

Interface dislocations in In x Ga1-x N/GaN heterostructures

2016 · Q. T. Li, A. Minj, et al. · physica status solidi (a) · 11

Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

2015 · Pierre Ruterana, Marie-Pierre Chauvat, et al. · Semiconductor Science and Technology · 11

Works count: 81

Citation count: 782

H-index: 15

I10-index: 27