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F. I. Manyakhin

Observed names: F. Manyakhin, F.I. Manyakhin, Fedor I Manyakhin, Fedor I. Manyakhin, Fedor Manyakhin, Feodor I. Manyakhin, Ф.И. Маняхин
ORCID: 0009-0003-7881-4370
Observed ORCID: 0009-0003-7881-4370
OpenAlex ID: A5113323706
Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
1998 · F. Manyakhin, A. Kovalev, et al. · MRS Internet Journal of Nitride Semiconductor Research · 67
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Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence
2001 · V. E. Kudryashov, S. S. Mamakin, et al. · Semiconductors · 22
Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells
1999 · V. E. Kudryashov, A. N. Turkin, et al. · Semiconductors · 16
Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells
1999 · A. E. Yunovich, V. E. Kudryashov, et al. · physica status solidi (a) · 14
Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation
1999 · A. N. Kovalev, F. I. Manyakhin, et al. · Semiconductors · 14
Mechanism and Regularity for Luminous Flux Decreasing of Efficient Small Powered LEDs Based on GaN/InGaN Structures at High Current Density
2024 · Feodor I. Manyakhin, Dmitry O. Varlamov, et al. · Light & Engineering · 12
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The Regularity of the Decrease in the Quantum Yield of Quantum-Wells LEDs at the Long-Term Current Flow from the ABC Model Position
2021 · Fedor I. Manyakhin, Lyudmila O. Mokretsova · Light & Engineering · 12
Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells
2003 · S. S. Mamakin, A. É. Yunovich, et al. · Semiconductors · 12
Physical–Mathematical Model Of The Internal Quantum Efficiency Dependence On The Current Of Leds With Quantum Wells
2020 · Fedor I. Manyakhin, Lyudmila O. Mokretsova · Light & Engineering · 10
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities
2018 · F. I. Manyakhin · Semiconductors · 10
Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures
1998 · A. N. Kovalev, F. I. Manyakhin, et al. · Semiconductors · 9
Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism
2024 · Fedor I. Manyakhin, Dmitry O. Varlamov, et al. · Journal of Semiconductors · 8
Application Of The Sah-noyce-shockley Recombination Mechanism To The Model Of The Voltagecurrent Relationship Of Led Structures With Quantum Wells
2020 · Fedor I. Manyakhin, Arthur B. Vattana, et al. · Light & Engineering · 8
The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
1998 · A. E. Yunovich, V. E. Kudryashov, et al. · MRS Internet Journal of Nitride Semiconductor Research · 8
Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures
1997 · F. Manyakhin, A. Kovalev, et al. · MRS Internet Journal of Nitride Semiconductor Research · 8
Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals
2008 · E. M. Zobov, M. E. Zobov, et al. · Semiconductors · 6
Electrical Properties and Luminescence Spectra of Light-Emitting Diodes with Modulated Doped InGaN/GaN Quantum Wells
2002 · A.E. Yunovich, S.S. Mamakin, et al. · MRS Proceedings · 5
Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Quantum Wells
1998 · A.E. Yunovich, V.E. Kudryashov, et al. · MRS Proceedings · 4
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockley and Shockley–Noyce–Sah models
2024 · Fedor I Manyakhin, Dmitry O Varlamov, et al. · Semiconductor Science and Technology · 3
Modeling the Energy Structure of a GaN p–i–n Junction
2018 · F. I. Manyakhin, L. O. Mokretsova · Russian Microelectronics · 3
Studies of InGaN LEDs degradation
2007 · O. I. Rabinovich, F. I. Manyakhin, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Mechanism of generation of nonequilibrium point defects of the crystalline lattice in the region of quantum wells of light-emitting-diode structures in the operating mode
2025 · Fedor I Manyakhin, Lyudmila O Morketsova, et al. · Semiconductor Science and Technology · 2
Mechanism of current–voltage dependence of quantum well light-emitting diodes
2025 · Fedor I. Manyakhin, Dmitry O. Varlamov, et al. · Journal of materials research/Pratt's guide to venture capital sources · 2
The Interrelation between Temperature and Power Supply Modes of Low Power High Efficiency Light Emitting Diodes
2023 · Dmitry O. Varlamov, Feodor I. Manyakhin, et al. · Light & Engineering · 2
Механизм и закономерность снижения светового потока светодиодов на основе структур AlGaN/InGaN/GaN с квантовыми ямами при длительном протекании прямого тока различной плотности
2018 · Ф.И. Маняхин · Физика и техника полупроводников · 2
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Works count: 47
Citation count: 274
H-index: 10
I10-index: 10
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