Get started
Author

F. Aniel

Observed names: ANIEL, Frédéric, Aniel Frederic, Aniel, F., Aniel, Frédéric, F Aniel, F P Aniel, Frederic Aniel, Frederic P. Aniel, Frédéric Aniel, Frédéric Aniel; <div><div>Institut d'Electronique Fondamentale/ Université Paris Sud</div></div>
Observed institutions: Université Paris-Sud, Centre National de la Recherche Scientifique, Chimie ParisTech - PSL, Rensselaer Polytechnic Institute, Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, Institut National de Physique Nucléaire et de Physique des Particules, Alcatel-Lucent (France), Instituto Politécnico Nacional
ORCID: 0009-0003-3620-8022
Observed ORCID: 0009-0003-3620-8022
OpenAlex ID: A5113476187
Energy-band structure of Ge, Si, and GaAs: A thirty-band k ∙ p method
2004 · Soline Richard, Frédéric Aniel, et al. · Physical Review B · 210
Complex permittivity characterization of benzocyclobutene for terahertz applications
2008 · Etienne Perret, Nicolas Zerounian, et al. · Microelectronic Engineering · 81
Recent advances in germanium emission [Invited]
2013 · P. Boucaud, M. El Kurdi, et al. · Photonics Research · 80
Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition
2000 · T. Brunhes, P. Boucaud, et al. · Applied Physics Letters · 66
230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications
2005 · P. Chevalier, C. Fellous, et al. · IEEE Journal of Solid-State Circuits · 63
Energy-band structure in strained silicon: A 20-band k⋅p and Bir–Pikus Hamiltonian model
2003 · Soline Richard, Frédéric Aniel, et al. · Journal of Applied Physics · 60
Direct and indirect band gap room temperature electroluminescence of Ge diodes
2010 · M. de Kersauson, R. Jakomin, et al. · Journal of Applied Physics · 57
Energy-band structure of GaAs and Si: A sps* k⋅p method
2001 · Nicolas Cavassilas, Frédéric Aniel, et al. · Physical review. B, Condensed matter · 45
High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges
2007 · P. Chevalier, B. Barbalat, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 40
SiGe HBTs featuring fT ≫400GHz at room temperature
2008 · B. Geynet, F. Danneville, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 35
Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's
2000 · F. Aniel, N. Zerounian, et al. · IEEE Transactions on Electron Devices · 34
Coupling 3-D Maxwell's and Boltzmann's equations for analyzing a terahertz photoconductive switch
2005 · M. Sirbu, S.B.P. Lepaul, et al. · IEEE Transactions on Microwave Theory and Techniques · 33
Strained silicon on SiGe: Temperature dependence of carrier effective masses
2003 · Soline Richard, Nicolas Cavassilas, et al. · Journal of Applied Physics · 32
High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET
2002 · F Aniel, M Enciso-Aguilar, et al. · Solid-State Electronics · 32
500 GHz cutoff frequency SiGe HBTs
2007 · N. Zerounian, F. Aniel, et al. · Electronics Letters · 28
Band diagrams of Si and Ge quantum wells via the 30-band k∙p method
2005 · Soline Richard, Frédéric Aniel, et al. · Physical Review B · 28
Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy
2002 · M.W. Dashiell, J. Kolodzey, et al. · IEEE Electron Device Letters · 26
Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model
2011 · E. Tea, F. Aniel · Journal of Applied Physics · 25
Tensile-strained germanium microdisk electroluminescence
2015 · M. Prost, M. El Kurdi, et al. · Optics Express · 24
Monte Carlo study of phonon dynamics in III-V compounds
2011 · Hani Hamzeh, Frédéric Aniel · Journal of Applied Physics · 24
Four noise parameter determination method for transistorsbased on the frequency dependence of the noise figure
1998 · V. Danelon, P. Crozat, et al. · Electronics Letters · 24
Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors
1995 · F. Aniel, P. Boucaud, et al. · Journal of Applied Physics · 23
SiGe heterojunction bipolar transistor issues towards high cryogenic performances
2008 · E. Ramirez-Garcia, N. Zerounian, et al. · Cryogenics · 22
0.3 dB minimum noise figure at 2.5 GHz of 0.13µm Si/Si 0.58 Ge 0.42 n-MODFETs
2001 · M. Enciso, F. Aniel, et al. · Electronics Letters · 22
DC and high frequency performance of 0.1 µ m n -type Si/Si 0.6 Ge 0.4 MODFET with f MAX =188 GHz at 300K and f MAX =230 GHz at 50K
2003 · M. Enciso-Aguilar, F. Aniel, et al. · Electronics Letters · 21
Works count: 187
Citation count: 1,747
H-index: 22
I10-index: 50
Year
Topic
Type