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James W. Kretchmer

Boron-implanted 6H-SiC diodes
1993 · Mario Ghezzo, Dale M. Brown, et al. · Applied Physics Letters · 46
Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes
2002 · Xian-an Cao, K. Topol, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 32
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
2002 · Robert E. Stahlbush, Jeffery B. Fedison, et al. · Materials science forum · 29
Dual-SiC Photodiode Devices for Simultaneous Two-Band Detection
2005 · Peter Sandvik, Dale Brown, et al. · Journal of The Electrochemical Society · 23
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Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
1998 · Nudjarin Ramungul, V. Khemka, et al. · Materials science forum · 21
Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices
2016 · Alexander Bolotnikov, Peter A. Losee, et al. · Materials science forum · 17
Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors
2000 · Jeffery B. Fedison, T. Paul Chow, et al. · Materials science forum · 10
Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
2004 · A.V. Los, Michael S. Mazzola, et al. · Materials science forum · 8
High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
2016 · Peter A. Losee, Alexander Bolotnikov, et al. · Materials science forum · 6
Ion Implantation Doping in SiC and its Device Applications
1998 · Mulpuri V. Rao, J. Gardner, et al. · Materials science forum · 5
Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers
2000 · Jeffery B. Fedison, Z. Li, et al. · Materials science forum · 3
4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
2006 · Jeffery B. Fedison, Chris S. Cowen, et al. · Materials science forum · 2
Silicon Fresnel lens fabricated using greyscale lithography
2019 · Chengpo Chen, Jason Karp, et al. · Current Developments in Lens Design and Optical Engineering · 1
4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
2006 · Jeffery B. Fedison, Chris S. Cowen, et al. · Materials science forum
Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology+
2000 · Dale Brown, Don McGrath, et al. · Materials science forum
Comparison of Bromide, Benzotriazole, and Phenyl Mercaptotetrazole and Their Effect on Photographic Development
1979 · James W. Kretchmer · RIT Scholar Works (Rochester Institute of Technology)
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Works count: 16
Citation count: 203
H-index: 8
I10-index: 7
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