Work

Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

Year: 2000

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.338-342.1367

Authors: Jeffery B. Fedison, Z. Li, V. Khemka, Nudjarin Ramungul, T. Paul Chow, Mario Ghezzo, James W. Kretchmer, Ahmed Elasser

Institutions: General Electric (United States), Rensselaer Polytechnic Institute

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2139238085

FWCI: 1.297

Cites:

Cited by: 3

Related to: 10