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Mario Ghezzo

Silicon carbide UV photodiodes
1993 · D.M. Brown, E.T. Downey, et al. · IEEE Transactions on Electron Devices · 163
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
2003 · A. Elasser, M.H. Kheraluwala, et al. · IEEE Transactions on Industry Applications · 143
Al and B ion-implantations in 6H- and 3C-SiC
1995 · Mulpuri V. Rao, Peter Griffiths, et al. · Journal of Applied Physics · 119
SiC Power Devices
1996 · T. P. Chow, M. Ghezzo · MRS Proceedings · 99
Silicon carbide MOSFET technology
1996 · D.M. Brown, E. Downey, et al. · Solid-State Electronics · 78
Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2]
1973 · M. Ghezzo, D. M. Brown · Journal of The Electrochemical Society · 72
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Nitrogen-implanted SiC diodes using high-temperature implantation
1992 · M. Ghezzo, D.M. Brown, et al. · IEEE Electron Device Letters · 71
SiC MOS interface characteristics
1994 · D.M. Brown, M. Ghezzo, et al. · IEEE Transactions on Electron Devices · 70
Characterization of phosphorus implantation in 4H-SiC
1999 · V. Khemka, R. Patel, et al. · Journal of Electronic Materials · 52
Phosphorus and boron implantation in 6H–SiC
1997 · Mulpuri V. Rao, Jason A. Gardner, et al. · Journal of Applied Physics · 52
Etch Rates of Doped Oxides in Solutions of Buffered HF
1973 · A. S. Tenney, M. Ghezzo · Journal of The Electrochemical Society · 49
Boron-implanted 6H-SiC diodes
1993 · Mario Ghezzo, Dale M. Brown, et al. · Applied Physics Letters · 46
Wide Bandgap Semiconductor Power Devices
1997 · T. P. Chow, N. Ramungul, et al. · MRS Proceedings · 43
Al‐0.9% Si/Si Ohmic Contacts to Shallow Junctions
1982 · S. S. Cohen, G. Gildenblat, et al. · Journal of The Electrochemical Society · 41
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Material and n-p junction properties of N-, P-, and N/P-implanted SiC
1998 · Jason A. Gardner, Andrew Edwards, et al. · Journal of Applied Physics · 38
Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers
2001 · J.B. Fedison, N. Ramungul, et al. · IEEE Electron Device Letters · 36
Nitrogen and aluminum implantation in high resistivity silicon carbide
1997 · Deborah Dwight, Mulpuri V. Rao, et al. · Journal of Applied Physics · 35
Al, Al/C and Al/Si implantations in 6H-SiC
1996 · Mulpuri V. Rao, Peter Griffiths, et al. · Journal of Electronic Materials · 35
Silicon Carbide MOSFET Integrated Circuit Technology
1997 · D. M. Brown, E. Downey, et al. · physica status solidi (a) · 34
Trends in advanced process technology—Submicrometer CMOS device design and process requirements
1986 · D.M. Brown, M. Ghezzo, et al. · Proceedings of the IEEE · 30
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications
2003 · A. Elasser, M. Kheraluwala, et al. · IEEE Industry Applications Society Annual Meeting (IAS) · 29
Elevated temperature nitrogen implants in 6H-SiC
1996 · Jason Gaedner, Mulpuri V. Rao, et al. · Journal of Electronic Materials · 29
Antimony‐Doped Tin Oxide Films Deposited by the Oxidation of Tetramethyltin and Trimethylantimony
1982 · T. P. Chow, M. Ghezzo, et al. · Journal of The Electrochemical Society · 26
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Composition of Phosphosilicate Glass by Infrared Absorption
1973 · A. S. Tenney, M. Ghezzo · Journal of The Electrochemical Society · 26
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LOPOS: Advanced Device Isolation for a 0.8 μm CMOS/BULK Process Technology
1989 · M. Ghezzo, E. Kaminsky, et al. · Journal of The Electrochemical Society · 25
Works count: 97
Citation count: 1,888
H-index: 25
I10-index: 46
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