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Ravi Ramanathan
Institution:
Skyworks Solutions (United States)
Observed institution:
Skyworks Solutions (United States)
OpenAlex ID:
A5113704013
Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
2012
·
Jiro Yota
, Hong Shen
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
113
Fabrication of a low resistivity tantalum nitride thin film
2005
·
Hong Shen
, Ravi Ramanathan
·
Microelectronic Engineering
·
26
Variable Frequency Microwave and Convection Furnace Curing of Polybenzoxazole Buffer Layer for GaAs HBT Technology
2007
·
Jiro Yota
, Hoa Ly
, et al.
·
IEEE Transactions on Semiconductor Manufacturing
·
20
Commercial Viability of a Merged HBT-FET (BiFET) Technology for GaAs Power Amplifiers
2007
·
Ravi Ramanathan
, Mike Sun
, et al.
·
7
FABRICATION AND CHARACTERIZATION OF THIN FILM RESISTORS FOR GaAs-BASED POWER AMPLIFIERS
2003
·
Hong Shen
, Jose Arreaga
, et al.
·
7
Development and Characterization of a 600 Å PECVD Si3N4 High-Density MIM Capacitor for InGaP/GaAs HBT Applications
2003
·
Jiro Yota
, Ravi Ramanathan
, et al.
·
4
A Method for Yield and Scaling Characterization of FETs in an InGaP/GaAs Merged HBT-FET (BiFET) Technology
2016
·
Andre G. Metzger
, Jiang Li
, et al.
·
IEEE Transactions on Semiconductor Manufacturing
·
1
In Search Of Higher Density MIM Capacitor forGaAs RF Applications
2006
·
J. Yota
, Ravi Ramanathan
, et al.
·
ECS Meeting Abstracts
·
1
PDF
InGaP/GaAs HBT implantation leakage current and electrical breakdown
2004
·
Hong Shen
, A.M Arrale
, et al.
·
Materials Science in Semiconductor Processing
·
1
pHEMT Behavioral Model with Gate- Lag Effects Applied to The Dynamic Simulation of Switching Speed
2022
·
Bin Li
, Andre G. Metzger
, et al.
·
IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
Using Channel Physical Relationships in pHEMT Modeling
2020
·
Yingying Yang
, Xiao-Ping Li
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Direct Die Solder of GaAs Power Amplifier Dies and Application of Electrolessly Plated Nickel Barrier
2013
·
Hong Shen
, Sri Maganti
, et al.
·
ECS Transactions
PDF
Plasma Etch Induced Surface Damage and its Impacts on GaAs Schottky Diodes
2011
·
Hong Shen
, Peter Dai
, et al.
Solving the GaAs Corrosion Problem
2006
·
Hong Shen
, Lam Luu-Henderson
, et al.
·
ECS Meeting Abstracts
PDF
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Works count:
18
Citation count:
180
H-index:
5
I10-index:
3
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