1992 · J. R. Lothian, J. M. Kuo, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 26

Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2

1989 · S. J. Pearton, A. B. Emerson, et al. · Journal of Applied Physics · 25

MO/Ti bilayer metallization for a self-aligned TiSi2 process

1984 · H. K. Park, J. Sachitano, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 23

MOS-device modeling for computer implementation

1973 · F. Jenkins, E. Lane, et al. · IEEE Transactions on Circuit Theory · 20

Tantalum nitride films as resistors on chemical vapor deposited diamond substrates

1993 · A. Katz, S. J. Pearton, et al. · Journal of Applied Physics · 18

Plasma enhanced beam deposition of thin films at low temperatures

1983 · R. P. H. Chang, S. Darack, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 14

Bonding of InP laser diodes by Au-Sn solder and tungsten-based barrier metallization schemes

1994 · C H Lee, K L Tai, et al. · Semiconductor Science and Technology · 13

PDF

Au-Sn/W and Au-Sn/Cr metallized chemical vapor deposited diamond heat sinks for InP laser device applications

1994 · A. Katz, F. Baiocchi, et al. · Journal of Applied Physics · 13

Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical vapor deposition

1992 · A. Katz, A. Feingold, et al. · Applied Physics Letters · 10

70 ps ECL gate Si bipolar technology using Borosenic-poly process with coupling-base implant

2003 · T. Yamaguchi, Y.-S. Yu, et al. · Custom Integrated Circuits Conference · 8

W(Zn) selectively deposited and locally diffused ohmic contacts to p-InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition

1993 · A. Katz, A. El-Roy, et al. · Applied Physics Letters · 8

Rapid thermal processing of WSix contacts to InP in low-pressure N2:H2 and tertiarybutylphosphine ambients

1991 · A. Katz, A. Feingold, et al. · Journal of Applied Physics · 8

Dry surface cleaning of plasma-etched high electron mobility transistors

1993 · S. J. Pearton, F. Ren, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 7

Aluminum composition dependence of reactive ion etching of AlGaAs with CCl2F2:O2

1989 · S. J. Pearton, W. S. Hobson, et al. · Journal of Applied Physics · 7

Tungsten metallization onto InP prepared by rapid thermal low-pressure chemical vapor deposition of WF6 and H2

1992 · A. Katz, A. Feingold, et al. · Applied Physics Letters · 6

Metallization Systems for Bonding of InP Laser Diodes to CVD-Diamond Submounts

1992 · A. Katz, K-W. Wang, et al. · MRS Proceedings · 6

Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine

1993 · A. Katz, A. Feingold, et al. · Applied Physics Letters · 4

Use of CF3,Br/Al, discharges for reactive ion etching of III-V semiconductors

1991 · S. J. Pearton, W. S. Hobson, et al. · Plasma Chemistry and Plasma Processing · 4

Works count: 41

Citation count: 490

H-index: 13

I10-index: 16