Author

Hann-Ping Hwang

Observed names: H. -P. Hwang, H. P. Hwang, H.-P. Hwang, H.P Hwang, H.P. Hwang

Institution: Powerchip (Taiwan)

Observed institutions: National Central University, Industrial Technology Research Institute, Powerchip (Taiwan)

OpenAlex ID: A5113898193

Si1−xGex/Si multi-quantum well phototransistor for near-infrared operation

2003 · Z Pei, L.S Lai, et al. · Physica E Low-dimensional Systems and Nanostructures · 10

D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs

1999 · Hann-Ping Hwang, Jia-Lin Shieh, et al. · Solid-State Electronics · 7

Unstrained In 0.3 Ga 0.7 As/In 0.29 Al 0.71 Asresonant tunnelling diodesgrown on GaAs

1994 · H.-P. Hwang, J.-L. Shieh, et al. · Electronics Letters · 7

Comparison of Electrical and Reliability Characteristics of Different Tunnel Oxides in SONOS Flash Memory

2006 · Jia-Lin Wu, Hua-Ching Chien, et al. · Records of the IEEE International Workshop on Memory Technology, Design, and Testing · 5

A new MMIC broadside coupler using an array of air-bridges for directivity enhancement

2004 · Sheng-Fuh Chang, Jia-Liang Chen, et al. · IEEE Microwave and Wireless Components Letters · 5

Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

2002 · S.R Sheng, S.P McAlister, et al. · Solid-State Electronics · 5

A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors

2001 · Hann-Ping Hwang, Yung-Shih Cheng, et al. · IEEE Transactions on Electron Devices · 4

Drift region doping effects on characteristics and reliability of high-voltage n-type metal–oxide–semiconductor transistors

2015 · Jone F. Chen, Chun-Po Chang, et al. · Japanese Journal of Applied Physics · 3

PDF

A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory

2009 · C. H. Liu, Y. M. Lin, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 3

Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory

2006 · Victor Chao-Wei Kuo, Chih-Ming Chao, et al. · Records of the IEEE International Workshop on Memory Technology, Design, and Testing · 3

Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

2018 · Yen-Lin Tsai, Jone F Chen, et al. · Semiconductor Science and Technology · 1

Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region

2016 · Jone F. Chen, Teng-Jen Ai, et al. · Japanese Journal of Applied Physics · 1

PDF

Thorough Diagnoses of the Impact of Flash Memory Cell UV-State Threshold Voltage on the Cell Reliability and Program/Erase Cycling Endurance Performance

2007 · Victor Chao-Wei Kuo, Hann-Ping Hwang, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1

High peak-to-valley current ratio In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As resonant tunneling diodes grown on GaAs

2005 · H.P. Hwang, J.L. Shieh, et al. · International Electron Devices and Materials Symposium · 1

Characteristics and reliability of metal–oxide–semiconductor transistors with various depths of plasma-induced Si recess structure

2018 · Jone F. Chen, Yen-Lin Tsai, et al. · Japanese Journal of Applied Physics

Effects of Si Recess Structure on Performance and Reliability in High Voltage n-MOSFETs

2017 · C. -Y. Chen, J. F. Chen, et al. · International Conference on Solid State Devices and Materials (SSDM)

A novel erase method for scaled NAND flash memory device

2016 · Chan-Ching Lin, Kuei-Shu Chang-Liao, et al. · International Symposium on Next-Generation Electronics

A novel erase method for scaled NAND flash memory device

2015 · Chan-Ching Lin, Kuei-Shu Chang-Liao, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

A Novel Hot DI Water Rinse on SOD Filled Self-Aligned Shallow Trench Isolation for Highly Reliable NAND Flash Memory

2010 · C. H. Liu, Y. M. Lin, et al. · International Conference on Solid State Devices and Materials (SSDM)

Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory

2009 · C. H. Liu, Y. M. Lin, et al. · IEEE International Memory Workshop (IMW)

Dimensional Effects of Fast and Slow Interface Trap Generation on Flash Memory Cells

2007 · Victor Chao-Wei Kuo, Chih-Kai Kang, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances

2006 · Victor Chao-Wei Kuo, Evans Ching-Sung Yang, et al. · Non-Volatile Memory Technology Symposium

In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As heterostructure devices grown on GaAs substrates with a metamorphic buffer design

2005 · Y.J. Chan, J.I. Chyi, et al. · Conference digest

Works count: 23

Citation count: 56

H-index: 5

I10-index: 1