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Toshihiro Sugii

Observed names: Sugii, Toshihiro, Toshihiro SUGII, Toshihiro Sugii Toshihiro Sugii, 杉井 寿博
OpenAlex ID: A5113944299
Excimer laser enhanced nitridation of silicon substrates
1984 · Toshihiro Sugii, Takashi Ito, et al. · Applied Physics Letters · 49
Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
1981 · Shuichi Saitoh, Toshihiro Sugii, et al. · Japanese Journal of Applied Physics · 42
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Enhanced Thermal Stability in Perpendicular Top-Pinned Magnetic Tunnel Junction With Synthetic Antiferromagnetic Free Layers
2013 · Chikako Yoshida, Takashi Takenaga, et al. · IEEE Transactions on Magnetics · 31
Reliability study of magnetic tunnel junction with naturally oxidized MgO barrier
2012 · Chikako Yoshida, Toshihiro Sugii · IEEE International Reliability Physics Symposium proceedings · 27
Highly scalable STT-MRAM with MTJs of top-pinned structure in 1T/1MTJ cell
2010 · Young Min Lee, Chikakko Yoshida, et al. · Symposium on VLSI Technology · 25
Ultrafast low-power operation of p+-n+ double-gate SOI MOSFETs
1994 · Tetsu Tanaka, Kunihiro Suzuki, et al. · 19
Modeling of small size MOSFETs with reverse short channel and narrow width effects for circuit simulation
1997 · Yuhua Cheng, Toshihiro Sugii, et al. · Solid-State Electronics · 17
Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film
2014 · Takashi Takenaga, Yosuke Tsuzaki, et al. · Journal of Applied Physics · 11
A 0.38-V operating STT-MRAM with process variation tolerant sense amplifier
2013 · Yohei Umeki, Koji Yanagida, et al. · IEEE Asian Solid-State Circuits Conference (A-SSCC) · 10
Drive Current Enhancement in Sub-50 nm CMOS by Reduction of SDE Resistance with Laser Thermal Process
2004 · Tomonari Yamamoto, Ken-ichi Goto, et al. · Journal of The Electrochemical Society · 10
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Thermal Budget for Fabricating p+ Polysilicon Gate with Thin Gate Oxide
1995 · Kunihiro Suzuki, Akira Satoh, et al. · Journal of The Electrochemical Society · 10
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Transistor design for 90 nm-generation and beyond
2003 · Toshihiro Sugii, Kiyoshi Watanabe, et al. · Fujitsu Scientific and Technical Journal · 9
Reliability enhancement due to in-situ post-oxidation of sputtered MgO barrier in double MgO barrier magnetic tunnel junction
2017 · Chikako Yoshida, Hideyuki Noshiro, et al. · AIP Advances · 8
Electrical-field and spin-transfer torque effects in CoFeB/MgO-based perpendicular magnetic tunnel junction
2016 · Chikako Yoshida, Hideyuki Noshiro, et al. · AIP Advances · 8
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Ultra Shallow Junction Formation by Cluster Ion Implantation
1998 · Jiro Matsuo, Takaaki Aoki, et al. · MRS Proceedings · 8
Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
1996 · Kunihiro Suzuki, Akira Satoh, et al. · Japanese Journal of Applied Physics · 7
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Micromagnetic study of current-pulse-induced magnetization switching in magnetic tunnel junctions with antiferromagnetically and ferromagnetically coupled synthetic free layers
2011 · Chikako Yoshida, Young Min Lee, et al. · Applied Physics Letters · 6
Analytical Models for n ++ -p Double-Gate SO1 MOSFET' s
1995 · Kunihiro Suzuki, Toshihiro Sugii · 6
A New SOI-Lateral Bipolar Transistor for High-Speed Operation
1991 · Toshihiro Sugii, Manabu Kojima, et al. · Japanese Journal of Applied Physics · 6
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A negative-resistance sense amplifier for low-voltage operating STT-MRAM
2015 · Yohei Umeki, Koji Yanagida, et al. · Asia and South Pacific Design Automation Conference (ASP-DAC) · 5
Correlation between microstructure and electromagnetic properties in magnetic tunnel junctions with naturally oxidized MgO barrier
2012 · Chikako Yoshida, Takao Ochiai, et al. · Journal of Applied Physics · 5
Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter
1991 · Toshihiro Sugii, Tatsuya Yamazaki Tatsuya Yamazaki, et al. · Japanese Journal of Applied Physics · 5
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High performance 50 nm PMOSFET using decaborane (B10H14) ion implantation and 2-step activation annealing process
1997 · Ken Goto, Jiro Matsuo, et al. · 4
Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction
2017 · Chikako Yoshida, Hideyuki Noshiro, et al. · AIP Advances · 3
STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier
2014 · Yohei UMEKI, Koji YANAGIDA, et al. · IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences · 3
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Works count: 105
Citation count: 361
H-index: 10
I10-index: 11
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