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Author

Jiaxing Wei

ORCID: 0000-0002-9896-3360
Observed ORCID: 0000-0002-9896-3360
OpenAlex ID: A5121318210
Comparative Study on High Threshold Voltage and Large Gate Swing Technologies of p-GaN Gate HEMT: Structural Scheme Versus Circuit Scheme
2026 · Yanfeng Ma, Sheng Li, et al. · IEEE Transactions on Power Electronics · 3
A stretchable RF filter based on screen-printed Ag–Cu conductive films for deformable electronics
2026 · Wendong Yang, Lingming Tong, et al. · Flexible and Printed Electronics · 1
1100-V, 600-A/cm 2 4H-SiC Lateral IGBT on N-Sub/N-Epi Stack With P-Top Protected Lightly Doped Drift Region
2025 · Jie Ma, Mengyao Zhao, et al. · IEEE Electron Device Letters · 1
Automatic TCAD calibration based on Bayesian optimization for SiC MOSFET
2026 · Mengyao Zhao, Yanji He, et al. · Science China Information Sciences
All-SiC integrated process platform: development roadmap and challenges
2026 · Jie Ma, Yawen Xu, et al. · Science China Information Sciences
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A stretchable screen-printed silver-based CPW antenna on PDMS with a wavy radiator for broadband on-body wireless applications
2026 · Zhihang Wang, Shengzhuo Liu, et al. · Flexible and Printed Electronics
A low-voltage three-state flexible tunable bandpass filter using organic electrochemical transistors for 5G NR n79 and Wi-Fi 6E applications
2026 · Wendong Yang, Lei Wu, et al. · npj Flexible Electronics
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Understanding Forward and Reverse Overcurrent-Induced Electrical Parameter Degradations of Cascode GaN HEMTs
2026 · Weihao Lu, Sheng Li, et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics
Matching Design of 650-V Cascode GaN Bidirectional Switch
2026 · Sheng Li, Ziyu Chen, et al. · IEEE Transactions on Electron Devices
Mobility-Boosting Technique With Floating N-Islands for 4H-SiC LDMOS
2025 · Yong Gu, Tianchun Nie, et al. · IEEE Electron Device Letters
Works count: 10
Citation count: 5
H-index: 1
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