Mirise Technologies Corporation (Japan)

Alternate names: Mirise Technologies, Mirise Technologies Corporation, 株式会社ミライズテクノロジーズ

ROR: 04pm66810

OpenAlex ID: I4405265403

A 77-GHz 8RX3TX Transceiver for 250-m Long-Range Automotive Radar in 40-nm CMOS Technology

2021 · Tomoyuki Arai, Tatsunori Usugi, et al. · IEEE Journal of Solid-State Circuits · 95

Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition

2021 · Hiroyuki Nishinaka, Tatsuji Nagaoka, et al. · Materials Science in Semiconductor Processing · 79

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress

2022 · Tetsuo Narita, Masakazu Kanechika, et al. · Scientific Reports · 47

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Fully Dynamic Discrete-Time ΔΣ ADC Using Closed-Loop Two-Stage Cascoded Floating Inverter Amplifiers

2021 · Akira Matsuoka, Tomohiro Nezuka, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 42

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Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment

2020 · Takashi Ishida, Kyung Pil Nam, et al. · Applied Physics Express · 31

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Homoepitaxial growth of Ge doped β-gallium oxide thin films by mist chemical vapor deposition

2023 · Temma Ogawa, Hiroyuki Nishinaka, et al. · Japanese Journal of Applied Physics · 27

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A Versatile ±25-A Shunt-Based Current Sensor With ±0.25% Gain Error From −40 °C to 85 °C

2022 · Zhong Tang, Roger Zamparette, et al. · IEEE Journal of Solid-State Circuits · 26

High conductivity of n-type β-Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition

2024 · Shoma Hosaka, Hiroyuki Nishinaka, et al. · AIP Advances · 25

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The FinFET effect in Silicon Carbide MOSFETs

2021 · F. Udrea, K. Naydenov, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 24

Online Condition Monitoring of Solder Fatigue in a Clip-Bonding SiC mosfet Power Assembly via Acoustic Emission Technique

2022 · Zheng Zhang, Chuantong Chen, et al. · IEEE Transactions on Power Electronics · 21

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

2021 · Tomoyuki Shoji, Tetsuo Narita, et al. · Applied Physics Express · 21

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Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

2021 · Tetsuo Narita, Yoshitaka Nagasato, et al. · Applied Physics Letters · 21

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

2024 · Hidekazu Tsuchida, Takahiro Kanda · Materials Science in Semiconductor Processing · 20

Experimental demonstration, challenges, and prospects of the vertical SiC FinFET

2022 · F. Udrea, K. Naydenov, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 20

A 79.2-μW 19.5-kHz-BW 94.8-dB-SNDR Fully Dynamic DT ΔΣ ADC Using CLS-Assisted FIA With Sampling Noise Cancellation

2023 · Akira Matsuoka, Yo Kumano, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 17

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Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD

2024 · Kazuki Ikeyama, Hidemoto Tomita, et al. · Applied Physics Express · 15

Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method

2020 · Norihiro Hoshino, Isaho Kamata, et al. · Applied Physics Express · 14

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Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method

2023 · Takeshi Okamoto, Hideyuki Uehigashi, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 13

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23.2 A 40A Shunt-Based Current Sensor with ±0.2% Gain Error from −40°C to 125°C and Self-Calibration

2023 · Zhong Tang, Nandor G. Toth, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 13

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Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method

2022 · Isaho Kamata, Norihiro Hoshino, et al. · Journal of Crystal Growth · 13

Control Method of Dual Inverter System for EV with One Battery

2022 · Tomonori Kimura, Takahiro Yamada, et al. · IEEJ Journal of Industry Applications · 12

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Determination of Mg acceptor concentration in GaN through photoluminescence

2021 · Masato Omori, Taisei Miyazaki, et al. · Applied Physics Express · 11

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Thinned Array with Steerable Nulls to cancel Grating Lobe for Automotive Radar Applications

2022 · Masato Kohtani, Sungwoo Cha, et al. · European Microwave Conference (EuMC) · 10

A 172.1dB-FoM 19.5kHz-BW DT ΔΣ ADC Using CLS-Assisted Fast Self-Quenching Floating Inverter Amplifier with Sampling Noise Cancellation