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PowerAmerica

Alternate name: PowerAmerica Institute
ROR: 02kqgjt07
OpenAlex ID: I4405280215
Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme
2016 · Woongje Sung, B. J. Baliga · IEEE Electron Device Letters · 130
A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension
2016 · Woongje Sung, B. J. Baliga · IEEE Electron Device Letters · 97
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Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
2017 · Kijeong Han, B. J. Baliga, et al. · IEEE Electron Device Letters · 93
A Comparative Study 4500-V Edge Termination Techniques for SiC Devices
2017 · Woongje Sung, B. Jayant Baliga · IEEE Transactions on Electron Devices · 64
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A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results
2017 · Kijeong Han, B. J. Baliga, et al. · IEEE Electron Device Letters · 56
Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results
2019 · Kijeong Han, B. J. Baliga · IEEE Transactions on Electron Devices · 45
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Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
2019 · Aditi Agarwal, Kijeong Han, et al. · IEEE Electron Device Letters · 37
New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs
2018 · Kijeong Han, Ajit Kanale, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 35
The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit
2018 · Kijeong Han, B. J. Baliga · IEEE Electron Device Letters · 31
Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)
2017 · Woongje Sung, Kijeong Han, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 26
IEEE ITRW Working Group Position Paper-System Integration and Application: Silicon Carbide: A Roadmap for Silicon Carbide Adoption in Power Conversion Applications
2018 · Jin Wang, Victor Veliadis, et al. · IEEE Power Electronics Magazine · 23
Decomposition and electro-physical model creation of the CREE 1200V, 50A 3-Ph SiC module
2016 · Adam J. Morgan, Yang Xu, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 22
Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC MOSFETs with Various Channel Lengths
2019 · Kijeong Han, Ajit Kanale, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 18
Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET
2019 · Kijeong Han, B. J. Baliga · IEEE Electron Device Letters · 17
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Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures
2018 · Kijeong Han, B. J. Baliga · IEEE Transactions on Electron Devices · 16
SiC Mass Commercialization: Present Status and Barriers to Overcome
2022 · Victor Veliadis · Materials science forum · 12
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Accumulation channel vs. inversion channel 1.2 kV rated 4H-SiC buffered-gate (BG) MOSFETs: Analysis and experimental results
2018 · Kijeong Han, B. Jayant Baliga, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 8
Suitability of N-ON Recessed Implanted Gate Vertical-Channel SiC JFETs for Optically Triggered 1200 V Solid-State Circuit Breakers
2016 · Victor Veliadis, B. Steiner, et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 8
SiC Power Device Mass Commercialization
2022 · V. Veliadis · European Solid-State Device Research Conference · 6
Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry
2021 · Nick Yun, Justin Lynch, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 6
IEEE ITRW Working Group Position Paper-Materials and Devices: WBG and UWBG Materials and Devices Are Examined in a New Working Group
2018 · Victor Veliadis, Robert Kaplar, et al. · IEEE Power Electronics Magazine · 6
SiC and GaN Power Devices
2023 · Konstantinos Zekentes, Victor Veliadis, et al. · Springer eBooks · 4
Overview of Silicon Carbide
2024 · Victor Veliadis, Ming Su, et al. · Springer eBooks · 3
Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)
2022 · Nick Yun, Justin Lynch, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
Manufacturing Processes
2024 · John R. Silk, Victor Veliadis, et al. · Springer eBooks · 2
Works count: 43
Citation count: 1,490
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