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Sony Semiconductor Manufacturing (Japan)

Alternate names: Sony Semiconductor Manufacturing Corporation, ソニーセミコンダクタマニュファクチャリング
ROR: 01v8hv039
OpenAlex ID: I4405283536
Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding
2016 · Y. Kagawa, N. Fujii, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 252
3.2-MP Back-Illuminated Polarization Image Sensor With Four-Directional Air-Gap Wire Grid and 2.5- $\mu$ m Pixels
2018 · Yasushi Maruyama, Takashi Terada, et al. · IEEE Transactions on Electron Devices · 110
4032 ppi High‐resolution OLED microdisplay
2018 · Takuma Fujii, Chiaki Kon, et al. · Journal of the Society for Information Display · 93
High‐efficiency OLED microdisplay with microlens array
2019 · Yosuke Motoyama, Kouhei Sugiyama, et al. · Journal of the Society for Information Display · 86
A back-illuminated global-shutter CMOS image sensor with pixel-parallel 14b subthreshold ADC
2018 · Masaki Sakakibara, Koji Ogawa, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 76
Pixel/DRAM/logic 3-layer stacked CMOS image sensor technology
2017 · H. Tsugawa, H. Takahashi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 55
5.7 A 132dB Single-Exposure-Dynamic-Range CMOS Image Sensor with High Temperature Tolerance
2020 · Yorito Sakano, Takahiro Toyoshima, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 54
An Advanced CuCu Hybrid Bonding For Novel Stacked CMOS Image Sensor
2018 · Y. Kagawa, N. Fujii, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 54
A 6.9- $\mu$ m Pixel-Pitch Back-Illuminated Global Shutter CMOS Image Sensor With Pixel-Parallel 14-Bit Subthreshold ADC
2018 · Masaki Sakakibara, Koji Ogawa, et al. · IEEE Journal of Solid-State Circuits · 49
8.3 M-Pixel 480-fps Global-Shutter CMOS Image Sensor with Gain-Adaptive Column ADCs and Chip-on-Chip Stacked Integration
2017 · Yusuke Oike, Kentaro Akiyama, et al. · IEEE Journal of Solid-State Circuits · 46
A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker Mitigation
2018 · S. Iida, Y. Sakano, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44
Low power consumption and high resolution 1280X960 Gate Assisted Photonic Demodulator pixel for indirect Time of flight
2020 · Y. Ebiko, H. Yamagishi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
A Back Illuminated 6 µm SPAD Pixel Array with High PDE and Timing Jitter Performance
2021 · S. Shimada, Y. Otake, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39
The Scaling of Cu-Cu Hybrid Bonding For High Density 3D Chip Stacking
2019 · Y. Kagawa, S. Hida, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 39
Four-directional pixel-wise polarization CMOS image sensor using air-gap wire grid on 2.5-μm back-illuminated pixels
2016 · Tomohiro Yamazaki, Yasushi Maruyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 38
A Back Illuminated 10μm SPAD Pixel Array Comprising Full Trench Isolation and Cu-Cu Bonding with Over 14% PDE at 940nm
2020 · K. Ito, Y. Otake, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36
A 1/2inch 48M All PDAF CMOS Image Sensor Using 0.8µm Quad Bayer Coding 2×2OCL with 1.0lux Minimum AF Illuminance Level
2019 · T. Okawa, S. Ooki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 34
7.6 A High-Speed Back-Illuminated Stacked CMOS Image Sensor with Column-Parallel kT/C-Cancelling S&H and Delta-Sigma ADC
2021 · Chihiro Okada, Koushi Uemura, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 31
7.5 A 250fps 124dB Dynamic-Range SPAD Image Sensor Stacked with Pixel-Parallel Photon Counter Employing Sub-Frame Extrapolating Architecture for Motion Artifact Suppression
2021 · Jun Ogi, Takafumi Takatsuka, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 28
A SPAD Depth Sensor Robust Against Ambient Light: The Importance of Pixel Scaling and Demonstration of a 2.5μm Pixel with 21.8% PDE at 940nm
2022 · S. Shimada, Y. Otake, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm via combination of dual diffraction structure and 2×2 on-chip lens
2023 · Y. Fujisaki, H. Tsugawa, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 20
High-Density and Large-Scale MEA System Featuring 236,880 Electrodes at 11.72μm Pitch for Neuronal Network Analysis
2020 · Yuri Kato, Yoshihisa Matoba, et al. · Symposium on VLSI Circuits · 19
Back-Illuminated $2.74 \ \mu \mathrm{m}$ -Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e-Saturation Signal
2018 · Y. Kumagai, R. Yoshita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
A 3.36- μ m-Pitch SPAD Photon-Counting Image Sensor Using a Clustered Multi-Cycle Clocked Recharging Technique With an Intermediate Most-Significant-Bit Readout
2024 · Takafumi Takatsuka, Jun Ogi, et al. · IEEE Journal of Solid-State Circuits · 18
Anomaly detection for sensor data of semiconductor manufacturing equipment using a GAN
2021 · Miki Hashimoto, Yusuke Ide, et al. · Procedia Computer Science · 18
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Works count: 86
Citation count: 6,675
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