Work

Point Defect Generation during Phosphorus Diffusion in Silicon: I . Concentrations above Solid Solubility

Year: 1987

Type: article

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.2100701

Authors: J. C. C. Tsai, D. G. Schimmel, R. B. Fair, W. Maszara

Institutions: AT&T (United States), North Carolina State University, MCNC Research and Development Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1496790962

FWCI: 1.682

Cites:

Cited by: 24

Related to: 10