Influence of base and PAG on deprotection blur in EUV photoresists and some thoughts on shot noise
Year: 2008
Type: article
Abstract: A contact-hole deprotection blur metric has been used to monitor the deprotection blur of an experimental open platform resist (EH27) as the weight percent of base and photo acid generator (PAG) were varied. Patterning ability in 1:1 line-space patterns is shown to improve at smaller pitches as base/PAG are increased however no significant change in deprotection blur was observed. Isolated (or intrinsic) line-edge-roughness (LER) is shown to improve with increased base loading while remaining fixed through PAG loading. A discussion of improved patterning performance as related to shot noise and deprotection blur concludes with a speculation that the spatial distribution of PAG molecules has been playing some role, perhaps a dominant one, in determining the uniformity of photo generated acids in the resists that have been studied.
Institution: University of California, Berkeley
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1567884812