Work

Effects of film thickness and process parameters on the properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric capacitors for non-volatile memory applications

Year: 2002

Type: conference-paper

Source: IEEE International Symposium on Applications of Ferroelectrics (ISAF)

DOI: 10.1109/isaf.1996.602760

Authors: P.Y. Chu, D.J. Taylor, P. Zurcher, B.E. White, S. Zafar, B. Jiang, B. Melnick, R.E. Jones, S.J. Gillespie, Wei Chen, N. Cave

Institution: Motorola (United States)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1794813613

FWCI:

Cites: 9

Cited by: 2

Related to: 10