Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103 , 013701 (2013)]
Year: 2013
Type: erratum
Abstract: New versions of Figures 1(a), 3(a), 3(b), and 4(a) are provided.In Figure 1(a), the circles are now appropriately filled; the words "Source," "Gate," and "Drain" are now positioned appropriately, and the line border around the word "Drain" is the appropriate thickness.In Figures 3(a), 3(b), and 4(a), the lines near the top of each plot that indicate statistical significance are arranged appropriately. 1 FIG. 1. a)
Source: Applied Physics Letters
DOI: 10.1063/1.4819200
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1973921085