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Isaac Bryan

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
2015 · Isaac Bryan, Zachary Bryan, et al. · Journal of Crystal Growth · 176
On compensation in Si-doped AlN
2018 · Joshua S. Harris, Jonathon N. Baker, et al. · Applied Physics Letters · 163
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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
2015 · Zachary Bryan, Isaac Bryan, et al. · Applied Physics Letters · 157
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
2018 · Isaac Bryan, Zachary Bryan, et al. · Applied Physics Letters · 143
The role of surface kinetics on composition and quality of AlGaN
2016 · Isaac Bryan, Zachary Bryan, et al. · Journal of Crystal Growth · 143
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
2014 · Pramod Reddy, Isaac Bryan, et al. · Journal of Applied Physics · 98
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
2013 · Benjamin E. Gaddy, Zachary Bryan, et al. · Applied Physics Letters · 94
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
2015 · W. Guo, R. Kirste, et al. · Applied Physics Letters · 91
Electronic Biosensors Based on III-Nitride Semiconductors
2015 · Ronny Kirste, Nathaniel Rohrbaugh, et al. · Annual Review of Analytical Chemistry · 88
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Comparative study of etching high crystalline quality AlN and GaN
2013 · W. Guo, J. Xie, et al. · Journal of Crystal Growth · 74
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
2014 · Benjamin E. Gaddy, Zachary Bryan, et al. · Applied Physics Letters · 73
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
2015 · Pramod Reddy, Isaac Bryan, et al. · Applied Physics Letters · 71
Polarity control and growth of lateral polarity structures in AlN
2013 · Ronny Kirste, Seiji Mita, et al. · Applied Physics Letters · 70
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
2016 · P. Reddy, M. P. Hoffmann, et al. · Journal of Applied Physics · 64
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
2014 · Wei Guo, Zachary Bryan, et al. · Journal of Applied Physics · 64
Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
2015 · Zachary Bryan, Isaac Bryan, et al. · Applied Physics Letters · 63
Ge doped GaN with controllable high carrier concentration for plasmonic applications
2013 · Ronny Kirste, Marc P. Hoffmann, et al. · Applied Physics Letters · 59
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
2014 · Zachary Bryan, Isaac Bryan, et al. · Applied Physics Letters · 56
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
2014 · Tomasz Sochacki, Zachary Bryan, et al. · Journal of Crystal Growth · 50
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
2016 · D. Alden, W. Guo, et al. · Applied Physics Letters · 43
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
2013 · I. Bryan, A. Rice, et al. · Applied Physics Letters · 43
Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition
2014 · Isaac Bryan, Zachary Bryan, et al. · Journal of Applied Physics · 41
Schottky contact formation on polar and non-polar AlN
2014 · Pramod Reddy, Isaac Bryan, et al. · Journal of Applied Physics · 40
Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes
2015 · Wei Guo, Ronny Kirste, et al. · Journal of Applied Physics · 35
Sapphire decomposition and inversion domains in N-polar aluminum nitride
2014 · Lindsay Hussey, Ryan M. White, et al. · Applied Physics Letters · 35
Works count: 60
Citation count: 2,421
H-index: 28
I10-index: 42
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