Work

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Year: 2015

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2015.12.022

Authors: Isaac Bryan, Zachary Bryan, Seiji Mita, Anthony Rice, James Tweedie, Ramón Collazo, Zlatko Sitar

Institutions: North Carolina State University, HexaTech (United States), Adroit Materials (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Association of Research Libraries, National Defense Science and Engineering Graduate, Division of Materials Research, Air Force Office of Scientific Research, Army Research Office

Awards: Materials World Network: Quasi-Phase Matching in Non-Centrosymmetric Wide Band Gap Semiconductors., G4002067534, G7494625442, Materials World Network: Science of Polar Homo- and Heterointerfaces

OpenAlex ID: W2205323907

FWCI: 4.566

Cites: 37

Cited by: 176

Related to: 10