Work

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Year: 2014

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4878657

Authors: Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Ronny Kirste, Zlatko Sitar, Ramón Collazo, Douglas L. Irving

Institutions: Tokuyama (Japan), North Carolina State University, HexaTech (United States), Tokyo University of Agriculture and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Japan Society for the Promotion of Science

Awards: Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy, ALUMINUM NITRIDE-BASED DEVICES FOR HIGH-VOLTAGE POWER ELECTRONICS

OpenAlex ID: W2048720358

FWCI: 2.636

Cites: 56

Cited by: 73

Related to: 10