Work

Comparative study of etching high crystalline quality AlN and GaN

Year: 2013

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2012.12.141

Authors: W. Guo, J. Xie, C. Akouala, S. Mita, A. Rice, J. Tweedie, I. Bryan, R. Collazo, Z. Sitar

Institutions: North Carolina State University, HexaTech (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Army Research Laboratory

OpenAlex ID: W1971107657

FWCI: 3.242

Cites: 33

Cited by: 74

Related to: 10