Work

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Year: 2014

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2014.2357013

Authors: James A. Schrock, William B. Ray II, Kevin Lawson, Argenis Bilbao, Stephen B. Bayne, Shad L. Holt, Lin Cheng, John W. Palmour, Charles Scozzie

Institutions: Texas Tech University, Wolfspeed, Inc. (United States), DEVCOM Army Research Laboratory

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W1983627056

FWCI: 3.45

Cites: 26

Cited by: 43

Related to: 10