Work

The diffusion of antimony in heavily doped and n- and p-type silicon

Year: 1986

Type: article

Source: Journal of materials research/Pratt's guide to venture capital sources

DOI: 10.1557/jmr.1986.0705

Authors: R.B. Fair, M.L. Manda, J.J. Wortman

Institutions: MCNC Research and Development Institute, Duke University, North Carolina State University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1990844860

FWCI: 1.877

Cites: 14

Cited by: 50

Related to: 10