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J. J. Wortman

Observed names: J. B. Wortman, J. J. WORTMAN, J. J. Wortman., J. T. Wortman, J. Wortman, J.J Wortman, J.J. WORTMAN, J.J. Wortman, Jim J. Wortman, Jimmie J Wortman, Jimmie J. Wortman, Jimmie Wortman, Wortman, J. J., Wortman, Jimmie J., Wortman,J. J.
Observed institutions: University of North Carolina at Chapel Hill, Oak Ridge National Laboratory, North Carolina State University, RTI International, MCNC Research and Development Institute, Texas Instruments (United States)
OpenAlex ID: A5111970676
Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium
1965 · J. J. Wortman, R. A. Evans · Journal of Applied Physics · 1,330
Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
1999 · N. Yang, W.K. Henson, et al. · IEEE Transactions on Electron Devices · 237
Effect of Mechanical Stress on p-n Junction Device Characteristics
1964 · J. J. Wortman, J. R. Hauser, et al. · Journal of Applied Physics · 182
Modeled tunnel currents for high dielectric constant dielectrics
1998 · E.M. Vogel, K.Z. Ahmed, et al. · IEEE Transactions on Electron Devices · 163
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
1999 · W.K. Henson, K.Z. Ahmed, et al. · IEEE Electron Device Letters · 162
Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon
1984 · R. B. Fair, J. J. Wortman, et al. · Journal of The Electrochemical Society · 158
Optimization of the germanium preamorphization conditions for shallow-junction formation
1988 · M.C. Ozturk, J.J. Wortman, et al. · IEEE Transactions on Electron Devices · 119
Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime
2000 · W.K. Henson, N. Yang, et al. · IEEE Transactions on Electron Devices · 113
A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides
2000 · N. Yang, W.K. Henson, et al. · IEEE Transactions on Electron Devices · 106
Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
1985 · K. Cho, M. Numan, et al. · Applied Physics Letters · 105
Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon
1984 · C. Carter, W. Maszara, et al. · Applied Physics Letters · 104
A simple parameter extraction method for ultra-thin oxide MOSFETs
1995 · P.K McLarty, S Cristoloveanu, et al. · Solid-State Electronics · 92
Rapid thermal annealing of arsenic and boron-implanted silicon
1983 · J. Narayan, O. W. Holland, et al. · Applied Physics Letters · 83
Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations
1995 · S. Zafar, K. A. Conrad, et al. · Applied Physics Letters · 76
Channeling effect for low energy ion implantation in Si
1985 · K. Cho, W.R. Allen, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 68
Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides
2000 · Nian Yang, W.K. Henson, et al. · IEEE Transactions on Electron Devices · 65
Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing
1992 · S. P. Ashburn, M. C. Öztürk, et al. · Journal of Electronic Materials · 65
Equipment fault detection using spatial signatures
1997 · M.M. Gardner, Jye-Chyi Lu, et al. · IEEE Transactions on Components Packaging and Manufacturing Technology Part C · 64
Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2
1992 · F. Scott Johnson, Donald S. Miles, et al. · Journal of Electronic Materials · 58
Temperature uniformity in RTP furnaces
1992 · F.Y. Sorrell, M.J. Fordham, et al. · IEEE Transactions on Electron Devices · 56
Selective low-pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germane
1990 · Yulin Zhong, Mehmet C. Öztürk, et al. · Applied Physics Letters · 52
Rapid thermal and pulsed laser annealing of boron fluoride-implanted silicon
1985 · J. Narayan, O. W. Holland, et al. · Journal of Applied Physics · 52
Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films
1996 · P. Morfouli, G. Ghibaudo, et al. · IEEE Electron Device Letters · 51
The diffusion of antimony in heavily doped and n- and p-type silicon
1986 · R.B. Fair, M.L. Manda, et al. · Journal of materials research/Pratt's guide to venture capital sources · 50
Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs
1996 · W.L. Hill, E.M. Vogel, et al. · IEEE Transactions on Electron Devices · 49
Works count: 233
Citation count: 5,036
H-index: 32
I10-index: 76
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