Work

Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

Year: 1992

Type: article

Abstract: We propose a general method to obtain high conductivity of either type in wide gap semiconductors where compensation normally limits conductivity of one or both types. We suggest that the successes of Amano et al. and of Nakamura et al. in obtaining more than 1018 cm-3 holes in GaN are particular examples of the general process that we propose.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.31.3662

Authors: James A. Van Vechten, J. David Zook, Robert D. Horning, Barbara Goldenberg

Institutions: Oregon State University, Honeywell (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1999253380

FWCI: 5.84

Cites: 13

Cited by: 170

Related to: 10