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Barbara L. Goldenberg

Observed names: B. Goldenberg, B. L. Goldenberg, B.L. Goldenberg, Barbara Goldenberg, Goldenberg, B.L.
OpenAlex ID: A5036619413
Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
1995 · W. Shan, T. J. Schmidt, et al. · Applied Physics Letters · 265
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
1997 · G. Y. Xu, A. Salvador, et al. · Applied Physics Letters · 239
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 · W. Shan, R. J. Hauenstein, et al. · Physical review. B, Condensed matter · 168
Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation
1992 · James A. Van Vechten, J. David Zook, et al. · Japanese Journal of Applied Physics · 167
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Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
1995 · X. H. Yang, T. J. Schmidt, et al. · Applied Physics Letters · 156
Mechanisms of band-edge emission in Mg-doped p-type GaN
1996 · M. Smith, G. D. Chen, et al. · Applied Physics Letters · 130
Temperature-dependent absorption measurements of excitons in GaN epilayers
1997 · A. J. Fischer, W. Shan, et al. · Applied Physics Letters · 118
Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
1993 · Barbara Goldenberg, J. David Zook, et al. · Applied Physics Letters · 115
Binding energy for the intrinsic excitons in wurtzite GaN
1996 · W. Shan, B. D. Little, et al. · Physical review. B, Condensed matter · 101
Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition
1995 · W. Shan, X. C. Xie, et al. · Applied Physics Letters · 97
Pressure-dependent photoluminescence study of wurtzite GaN
1995 · W. Shan, T. J. Schmidt, et al. · Applied Physics Letters · 92
Femtosecond four-wave-mixing studies of nearly homogeneously broadened excitons in GaN
1997 · A. J. Fischer, W. Shan, et al. · Physical review. B, Condensed matter · 66
Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition
1996 · W. Shan, T. Schmidt, et al. · Journal of Applied Physics · 50
Intrinsic exciton transitions in GaN
1998 · W. Shan, A. J. Fischer, et al. · Journal of Applied Physics · 44
Ultraviolet photoluminescence from undoped and zn doped AlxGa1−xN with x between 0 and 0.75
1991 · H. G. Lee, M. Gershenzon, et al. · Journal of Electronic Materials · 43
Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaN
1996 · B. J. Skromme, H. Zhao, et al. · MRS Proceedings · 32
Picosecond four-wave-mixing in GaN epilayers at 532 nm
1996 · Bahman Taheri, J. Hays, et al. · Applied Physics Letters · 28
Neodymium and Erbium Implanted Gan
1996 · E. Silkowski, Y. K. Yeo, et al. · MRS Proceedings · 28
Large optical nonlinearities near the band gap of GaN thin films
1998 · T. J. Schmidt, J. J. Song, et al. · Applied Physics Letters · 20
Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure
1998 · W. Shan, J. W. Ager, et al. · Applied Physics Letters · 15
Optical studies of epitaxial GaN-based materials
1996 · Jin-Joo Song, W. Shan, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 9
Stimulated emission in GaN thin films in the temperature range of 300–700 K
1999 · S. Bidnyk, B. D. Little, et al. · Journal of Applied Physics · 8
A high temperature ODMR study of the two crystalline phases of benzil
1979 · I.Y. Chan, Claude J. Sandroff, et al. · Chemical Physics Letters · 8
AlxGa1−xN polarity determination by x-ray diffraction
1989 · R. D. Horning, B. L. Goldenberg · Applied Physics Letters · 7
Coherent-Transient Four-Wave-Mixing Studies of Excitons in a High Quality GaN Epilayer
1997 · A. J. Fischer, W. Shan, et al. · physica status solidi (a) · 6
Works count: 45
Citation count: 2,024
H-index: 19
I10-index: 20
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