Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
Year: 1993
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.108963
Institution: Honeywell (United States)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2067714641
