Work

Intrinsic exciton transitions in GaN

Year: 1998

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.366660

Authors: W. Shan, A. J. Fischer, S. J. Hwang, B. D. Little, R. J. Hauenstein, X. C. Xie, J. J. Song, D. S. Kim, B. Goldenberg, R. Horning, S. Krishnankutty, W. G. Perry, M. D. Bremser, R. F. Davis

Institutions: Oklahoma State University, Seoul National University, Honeywell (United States), North Carolina State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Japan Society for the Promotion of Science, Lawrence Berkeley National Laboratory

Award: Electronic structure of single wall carbon nanotubes in localized light field

OpenAlex ID: W1998954009

FWCI: 2.638

Cites: 32

Cited by: 44

Related to: 10