Work

A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

Year: 2006

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.200601025

Authors: M.‐J. Lee, S. Seo, D.‐C. Kim, S.‐E. Ahn, D. H. Seo, I.‐K. Yoo, I.‐G. Baek, D.‐S. Kim, I.‐S. Byun, S.‐H. Kim, I.‐R. Hwang, J.‐S. Kim, S.‐H. Jeon, B. H. Park

Institutions: Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea), Inha Technical College, Samsung Electronics (South Korea), Konkuk University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2002374172

FWCI: 14.83

Cites: 13

Cited by: 234

Related to: 10