Work

19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology

Year: 2014

Type: conference-paper

Source: Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference

DOI: 10.1109/isscc.2014.6757460

Authors: Richard Fackenthal, Makoto Kitagawa, Wataru Otsuka, Kirk Prall, Duane Mills, Keiichi Tsutsui, Jahanshir Javanifard, Kerry Tedrow, Tomohito Tsushima, Yoshiyuki Shibahara, Glen Hush

Institutions: Micron (United States), Sony (Japan)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2020003503

FWCI: 37.74

Cites: 10

Cited by: 227

Related to: 10