Work

Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon

Year: 1984

Type: article

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.2115263

Authors: R. B. Fair, J. J. Wortman, J. Liu

Institutions: North Carolina State University, MCNC Research and Development Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Semiconductor Research Corporation

OpenAlex ID: W2025241552

FWCI: 9.748

Cites:

Cited by: 158

Related to: 10