Work

IIB-6 shallow p+-n junction for CMOS VLSI application using germanium preamorphization

Year: 1985

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1985.22322

Authors: J. Liu, J.J. Wortman, R.B. Fair

Institution: North Carolina State University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2025310234

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