Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process
Year: 2008
Type: article
Abstract: The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that the Schottky barrier height (Φb) can be stabilized by Ti sintering process and the forward current (IF) abruptly rises at the same knee voltage for all samples. On the other hand, the on-resistance (Ron) and VF were dispersed. The instability corresponds to the values calculated by the dispersion of ND, substrate resistivity and substrate thickness.
Source: Materials science forum
Authors: Kenichi Kuroda, Yoshinori Matsuno, Kenichi Ohtsuka, Naoki Yutani, Shozo Shikama, Hiroaki Sumitani
Institution: Mitsubishi Electric (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2041390503