Work

Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al x Ga1− x N heterojunctions

Year: 1992

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.106798

Authors: M. Asif Khan, J. N. Kuznia, J. M. Van Hove, N. Pan, J. Carter

Institution: Raytheon (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2043463741

FWCI: 3.625

Cites: 17

Cited by: 254

Related to: 10