A high-Si content middle layer for ArF trilayer patterning
Year: 2008
Type: conference-paper
DOI: 10.1117/12.772854
Authors: Joseph Kennedy, Songyuan Xie, Ronald Katsanes, Kyle Flanigan, Sudip Mukhopadhyay, Benjamin Wu, Edward W. Rutter, Jr., Mark Slezak
Institutions: Honeywell (United States), JSR (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2063684919