Very shallow p+-n junction formation by low-energy BF+2 ion implantation into crystalline and germanium preamorphized silicon
Year: 1988
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.99242
Authors: M. C. Ozturk, J. J. Wortman, R. B. Fair
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2072590732