Accurate determination of 77K hole concentration in Pb0.8Sn0.2Te from near-room-temperature thermoelectric measurements
Year: 1978
Type: article
Abstract: It is shown that thermoelectric voltage measurements in the mixed-conduction region can be used to determine accurately the extrinsic hole concentration p 77K in Pb 0.8 Sn 0.2 Te. For the p 77K range, 10 16 -10 18 cm -3 , this can be achieved by a thermoelectric voltage measurement over the temperature range 295-395K. From such measurements on bulk crystals the thermoelectric power of Pb 0.8 Sn 0.2 Te has been determined and the intrinsic carrier density estimated to be 8*10 16 cm -3 at 295K, with an electron/hole mobility ratio of 2.0.
Author: M L Young
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2077065158