Work

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

Year: 2012

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2012.2204856

Authors: Stefan Mueller, Scott R. Summerfelt, Johannes Muller, Uwe Schroeder, Thomas Mikolajick

Institutions: NaMLab (Germany), Texas Instruments (United States), Center Nanoelectronic Technologies

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2085867935

FWCI: 4.297

Cites: 16

Cited by: 165

Related to: 10